Improvement of SiO2/SiC Interface Properties by Nitrogen Radical Irradiation

元データ 2003-06-01 Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyo

概要

Effects of nitrogen (N) radical irradiation on SiO2/4H- and 6H-SiC interface properties were investigated. N radicals were irradiated to dry thermal oxides on SiC. X-ray photoelectron spectroscopy measurements revealed that N atoms were introduced into the SiO2/SiC interface with 1 at%. To evaluate the interface state density, high and low frequency capacitance - voltage characteristics were measured using n-type metal-oxide-semiconductor (MOS) structures. The interface state density was reduced by irradiation of N radicals. Thin oxides were found to be effective in reducing the interface state density. The channel mobility of n-channel inversion-mode MOS field-effect transistors was improved. The N atom incorporation gives a favorable effect for the improvement of SiO2/SiC interface properties.

著者

Yano Hiroshi Graduate School Of Materials Science Nara Institute Of Science And Technology
Fuyuki Takashi Graduate School Of Material Science Nara Institute Of Science And Technology
Uraoka Yukiharu Graduate School of Material Science, Nara Institute of Science and Technology, Takayama 8916-5, Ikoma, Nara 630-0192, Japan
Hatayama Tomoaki Graduate School of Engineering, Kyoto Univercity
Maeyama Yuusuke Graduate School of Materials Science, Nara Institute of Science and Technology, 8916-5 Takayama, Ikoma, Nara 630-0192, Japan
Furumoto Yoshihisa Graduate School of Materials Science, Nara Institute of Science and Technology, 8916-5 Takayama, Ikoma, Nara 630-0192, Japan

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