Improvement of SiO2/SiC Interface Properties by Nitrogen Radical Irradiation

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概要

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• Effects of nitrogen (N) radical irradiation on SiO2/4H- and 6H-SiC interface properties were investigated. N radicals were irradiated to dry thermal oxides on SiC. X-ray photoelectron spectroscopy measurements revealed that N atoms were introduced into the SiO2/SiC interface with 1 at%. To evaluate the interface state density, high and low frequency capacitance - voltage characteristics were measured using n-type metal-oxide-semiconductor (MOS) structures. The interface state density was reduced by irradiation of N radicals. Thin oxides were found to be effective in reducing the interface state density. The channel mobility of n-channel inversion-mode MOS field-effect transistors was improved. The N atom incorporation gives a favorable effect for the improvement of SiO2/SiC interface properties.

• Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
• 2003-06-01

著者

• Yano Hiroshi

  Graduate School Of Materials Science Nara Institute Of Science And Technology

• Fuyuki Takashi

  Graduate School Of Material Science Nara Institute Of Science And Technology

• Uraoka Yukiharu

  Graduate School of Material Science, Nara Institute of Science and Technology, Takayama 8916-5, Ikoma, Nara 630-0192, Japan

• Hatayama Tomoaki

  Graduate School of Engineering, Kyoto Univercity

• Maeyama Yuusuke

  Graduate School of Materials Science, Nara Institute of Science and Technology, 8916-5 Takayama, Ikoma, Nara 630-0192, Japan

• Furumoto Yoshihisa

  Graduate School of Materials Science, Nara Institute of Science and Technology, 8916-5 Takayama, Ikoma, Nara 630-0192, Japan

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