Improvement of SiO2/SiC Interface Properties by Nitrogen Radical Irradiation

元データ 出版 2003-06-01 Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyo

概要

Effects of nitrogen (N) radical irradiation on SiO2/4H- and 6H-SiC interface properties were investigated. N radicals were irradiated to dry thermal oxides on SiC. X-ray photoelectron spectroscopy measurements revealed that N atoms were introduced into the SiO2/SiC interface with 1 at%. To evaluate the interface state density, high and low frequency capacitance - voltage characteristics were measured using n-type metal-oxide-semiconductor (MOS) structures. The interface state density was reduced by irradiation of N radicals. Thin oxides were found to be effective in reducing the interface state density. The channel mobility of n-channel inversion-mode MOS field-effect transistors was improved. The N atom incorporation gives a favorable effect for the improvement of SiO2/SiC interface properties.

著者

Maeyama Yuusuke Graduate School of Materials Science, Nara Institute of Science and Technology, 8916-5 Takayama, Ikoma, Nara 630-0192, Japan
Yano Hiroshi Graduate School Of Materials Science Nara Institute Of Science And Technology
Furumoto Yoshihisa Graduate School of Materials Science, Nara Institute of Science and Technology, 8916-5 Takayama, Ikoma, Nara 630-0192, Japan
Hatayama Tomoaki Graduate School of Engineering, Kyoto Univercity
Uraoka Yukiharu Graduate School of Material Science, Nara Institute of Science and Technology, Takayama 8916-5, Ikoma, Nara 630-0192, Japan
Fuyuki Takashi Graduate School Of Material Science Nara Institute Of Science And Technology

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山本 倬司 横浜市大眼科
佐藤 優太 早稲田大学理工学術院
中村 将之 大林組
葛西 誠也 北海道大学
阿部 齊 岩手医科大学外科教室