Three-Dimensional Nanodot-Type Floating Gate Memory Fabricated by Bio-Layer-by-Layer Method
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概要
- 論文の詳細を見る
The properties of a nanodot-type floating gate memory with a multilayered nanodot array were investigated. High-density and uniform cobalt bio-nanodot (Co-BND) arrays were stacked on a SiO<sub>2</sub> tunnel oxide layer by a bio-layer-by-layer method (Bio-LBL). Memory properties, such as hysteresis width, charge retention, charging speed, and reliability, were improved by increasing the number of Co-BND arrays in a floating gate memory. This research confirmed that the proposed memory is promising for application in next-generation memory devices.
- 2011-08-25
著者
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Yamashita Ichiro
Graduate School Of Materials Science Nara Institute Of Science And Technology
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Ohara Kosuke
Graduate School Of Materials Science Nara Institute Of Science And Technology
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Zheng Bin
Graduate School Of Materials Science Nara Institute Of Science And Technology
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Uenuma Mutsunori
Graduate School Of Materials Science Nara Institute Of Science And Technology
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Shiba Kiyotaka
Core Research For Evolutional Science And Technology Japan Science And Technology Agency
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Ishikawa Yasuaki
Graduate School Of Materials Science Nara Institute Of Science And Technology
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Uraoka Yukiharu
Graduate School of Material Science, Nara Institute of Science and Technology, Takayama 8916-5, Ikoma, Nara 630-0192, Japan
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Ishikawa Yasuaki
Graduate School of Materials Science, Nara Institute of Science and Technology, Ikoma, Nara 630-0192, Japan
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Shiba Kiyotaka
Core Research for Evolutional Science and Technology, Japan Science and Technology Agency, Kawaguchi, Saitama 332-0012, Japan
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Ohara Kosuke
Graduate School of Materials Science, Nara Institute of Science and Technology, Ikoma, Nara 630-0192, Japan
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