Thin-Film Transistor Type Flash Memory with Biomineralized Co Nanodots on Silicon-on-Insulator
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概要
- 論文の詳細を見る
We proposed the fabrication of nanodot-type floating gate memory with biomineralized nanodots on silicon-on-insulator. High-density Co bionanodots (Co-BNDs) were adsorbed on SiO2. The current–voltage curve with a large hysteresis caused by electron injection into Co-BNDs and the emission of Co-BNDs were observed. A good retention characteristic due to charge confinement in the potential well of a Co-BND was observed. Good writing and erasing characteristics were observed. We confirmed that the memory has high reliability with good endurance. This proposed flash memory is promising for memory devices in system-on-panel displays owing to its fast writing/erasing speed and high reliability.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2010-04-25
著者
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Yamashita Ichiro
Graduate School Of Materials Science Nara Institute Of Science And Technology
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Ohara Kosuke
Graduate School Of Materials Science Nara Institute Of Science And Technology
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Yukiharu Uraoka
Core Research for Evolutional Science and Technology (CREST), Japan Science and Technology Agency, 4-1-8 Honcho, Kawaguchi, Saitama 332-0012, Japan
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Ichiro Yamashita
Graduate School of Materials Science, Nara Institute of Science and Technology, 8916-5 Takayama, Ikoma, Nara 630-0192, Japan
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Uraoka Yukiharu
Core Research for Evolutional Science and Technology (CREST), Japan Science and Technology Agency, 4-1-8 Honcho, Kawaguchi, Saitama 332-0012, Japan
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