Nondestructive Analysis of Crystal Defects in 4H-SiC Epilayer by Devised Electron-Beam-Induced Current Method

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概要

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• A planar mapping electron-beam-induced current (EBIC) method was applied to analyze the crystal defects in 4H-SiC epilayers for the first time. The crystal defects such as dislocations and subgrain boundaries could be clearly observed using 0.02-μm-thick nickel Schottky contacts formed on the whole 4H-SiC surface. A basal plane dislocation was peculiarly displayed as a streamlike shape in the EBIC image. The relation between the resolution of images and the accelerating voltage in the devised EBIC method is discussed.

• 2005-09-10

著者

• Yano Hiroshi

  Graduate School Of Materials Science Nara Institute Of Science And Technology

• Fuyuki Takashi

  Graduate School Of Material Science Nara Institute Of Science And Technology

• Yamaguchi Kenji

  Central Research Institute Mitsubishi Materials Corporation

• Uraoka Yukiharu

  Graduate School of Material Science, Nara Institute of Science and Technology, Takayama 8916-5, Ikoma, Nara 630-0192, Japan

• Hatayama Tomoaki

  Graduate School of Engineering, Kyoto Univercity

• Yamaguchi Kenji

  Central Research Institute, Mitsubishi Materials Corporation, 1-297 Kitabukuro-cho, Omiya-ku, Saitama 330-8508, Japan

• Nitani Satoshi

  Graduate School of Materials Science, Nara Institute of Science and Technology, 8916-5 Takayama, Ikoma, Nara 630-0192, Japan

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