Spatially Resolved Electroluminescence Imaging of Shunt Sources in Crystalline Silicon Solar Cells
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概要
- 論文の詳細を見る
Electroluminescence (EL) under forward bias represents the total excess minority carrier density in cells. In contrast, EL under reverse bias can be detected as hot spots, which are closely related to harmful current shunt paths. In this study, we detected the shunt position using two kinds of EL. Additionally, we analyzed by the positions and origins of shunt sources using electron-beam-induced-current, lock-in thermography, and an electron-probe-micro analyser. We found two kinds of shunt and we detected a defect located in the depletion layer. We proposed shunt models in the depletion layer using the band model.
- 2012-10-25
著者
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Fuyuki Takashi
Graduate School Of Material Science Nara Institute Of Science And Technology
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Hirata Kenji
Graduate School Of Materials Science Nara Institute Of Science And Technology
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Sugimura Emi
Graduate School Of Materials Science Nara Institute Of Science And Technology (naist)
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Sugimura Emi
Graduate School of Materials Science, Nara Institute of Science and Technology (NAIST), Ikoma, Nara 630-0192, Japan
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Takamoto Sohichiroh
Graduate School of Materials Science, Nara Institute of Science and Technology (NAIST), Ikoma, Nara 630-0192, Japan
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Tsujii Shinichiro
Graduate School of Materials Science, Nara Institute of Science and Technology (NAIST), Ikoma, Nara 630-0192, Japan
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Tani Ayumi
Graduate School of Materials Science, Nara Institute of Science and Technology (NAIST), Ikoma, Nara 630-0192, Japan
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