Origin of Anisotropic Electrical Properties of 4H-SiC Trench Metal-Oxide-Semiconductor Field-Effect Transistors on Off-Axis Substrates
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概要
著者
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Yano Hiroshi
Graduate School Of Materials Science Nara Institute Of Science And Technology
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Fuyuki Takashi
Graduate School Of Material Science Nara Institute Of Science And Technology
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Hatayama Tomoaki
Graduate School of Engineering, Kyoto Univercity
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Ueoka Yoshihiro
Graduate School of Materials Science, Nara Institute of Science and Technology, Ikoma, Nara 630-0192, Japan
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Shingu Kenta
Graduate School of Materials Science, Nara Institute of Science and Technology, Ikoma, Nara 630-0192, Japan
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