Improvement of Rectifying Property in Pt/TiOx/Pt by Controlling Oxidization of TiOx Layer
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概要
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Rectifying Pt/TiOx/Pt capacitors have been prepared by depositing a single TiOx layer. An Ohmic contact is always found at TiOx/Pt (bottom electrode, BE), and is attributed to the formation of a dead layer at the beginning of the deposition process. The current--voltage ($I$--$V$) characteristic is governed by the transport characteristic of TiOx/Pt (top electrode, TE). The rectifying property is only found in Pt/TiOx/Pt with the TiOx layer when the O2 working flow is high during the deposition process. Besides a high O2 flow, a high working pressure is also required. Moreover, postannealing treatment can improve the rectifying property of the capacitors. Upon the optimization of the postannealing treatment process, the rectifying ratio at $\pm 1.0$ V increases from 20 to $4 \times 10^{3}$.
- 2011-04-25
著者
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Shima Hisashi
Nanodevice Innovation Research Center (NIRC), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan
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Zhong Ni
Nanodevice Innovation Research Center (NIRC), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan
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Akinaga Hiro
Nanodevice Innovation Research Center (NIRC), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan
関連論文
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