28aRH-11 Heat Capacity Study of Polycrystalline CeFeAsO_<(1-x)>F_x Samples

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概要

• 論文の詳細を見る
• 社団法人日本物理学会の論文
• 2009-08-18

著者

• KADOWAKI Kazuo

  Institute of Materials Science, University of Tsukuba

• Chong Shen

  Institute Of Materials Science University Of Tsukuba

• Kadowaki Kazuo

  Institute Of Materials Science University Of Tsukuba

• STOREY James

  Cavendish Laboratory, University of Cambridge

• LORAM John

  Cavendish Laboratory, University of Cambridge

• Loram John

  Cavendish Laboratory University Of Cambridge

• Storey James

  Cavendish Laboratory University Of Cambridge

• Kadowaki Kazuo

  Institute Of Materials Science And Graduate School Of Pure And Applied Sciences University Of Tsukuba

• CHONG Shen

  Institute of Materials Science, University of Tsukuba

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• 20pWF-1 Vortex Matter in Bulk and Mesoscopic Bi_2Sr_2CaCu_2O_ Single Crystals in High Magnetic Fields Near ab-Plane
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• Neutron Powder Diffraction Study on Mg^B_2 Synthesized by Different Procedures
• 28aPS-25 Exploring the Single Crystal Growth of Iron-Arsenide Compounds Via the Bridgman Method
• 28aRH-11 Heat Capacity Study of Polycrystalline CeFeAsO_F_x Samples
• 20aYA-12 Varying the T_c in Superconducting Gadolinium Oxypnictide System
• Current Distribution in the Quantum Hall Regime Observed in a Distributed Magnetic Field
• Epitaxial Growth and Magnetic Properties of Ferromagnetic Fe_3N on Si(111) by Molecular Beam Epitaxy Using AlN/3C-SiC Intermediate Layers
• Geometrical Full-Wavelength Resonance Mode Generating Terahertz Waves from a Single-Crystalline Bi2Sr2CaCu2O8+\delta Rectangular Mesa
• Terahertz Radiation Emitted from Intrinsic Josephson Junctions in High-T_c Superconductor Bi_2Sr_2CaCu_2O_
• High Temperature Superconductor Terahertz Emitters: Fundamental Physics and Its Applications
• Real-Time Imaging of Vortex–Antivortex Annihilation in Bi2Sr2CaCu2O8+δ Single Crystals by Low Temperature Scanning Hall Probe Microscopy
• Epitaxial Growth and Magnetic Properties of Ferromagnetic Fe3N on Si(111) by Molecular Beam Epitaxy Using AlN/3C–SiC Intermediate Layers

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