Temperature-Dependent Interface-State Response in an Al2O3/n-GaN Structure

スポンサーリンク

概要

• 論文の詳細を見る

• With a combination of the static capacitance-voltage (C-V) and the capacitance transient (C-t) methods, the interface-state response in an Al2O3/n-GaN structure was investigated at temperatures ranging from 23 to 300℃. We observed pronounced degradation of the static C-V curves measured at high temperatures, arising from the enhancement of charging/discharging rates of interface states at deeper energies within the bandgap of GaN. Faster responses with larger magnitudes also appeared in the time-dependent capacitance at high temperatures. From a simple analysis of the C-t results, we estimated the capture cross section of the states to be on the order of 10^[-19]cm^[2].

• Japan Society of Applied Physicsの論文
• 2008-07-25

著者

• Hashizume Tamotsu

  Res. Center For Integrated Quantum Electronics And Graduate School Of Information Sci. And Technol.

関連論文

• Temperature-Dependent Interface-State Response in an Al2O3/n-GaN Structure
• Dynamic response of interface state charges in GaN MIS structures
• High-temperature and UV-assisted C-V characterization of GaN MIS structures

スポンサーリンク