Large photocurrent-response observed at Pt/InP Schottky interface formed on anodic porous structure
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概要
- 論文の詳細を見る
A photoelectric-conversion device-based on an InP porous structure utilizing the large surface area inside pores and the low reflectance on the porous surface-is proposed. The InP walls inside the pores are covered with thin platinum films that form a Schottky barrier yielding an electric field that separates photo carriers generated under illumination. The coverage of the platinum film and its optical reflectance depended largely on the surface morphology of the porous structure. Removal of the irregular top layer formed at the initial stage of the pore formation effectively improved the coverage of the platinum film, which showed a very low optical reflectance (i.e., below 3.2%). According to current-voltage measurements under illumination, the platinum/porous InP showed larger photocurrents and higher responsivity than those of a reference planar sample.
- 2012-06-30
著者
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Sato T
Hokkaido Univ. Sapporo Jpn
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Yatabe Zenji
Lab. De Thermodyn. Et Energe. Des Flu. Comp. Umr Total Cnrs 5150 Univ.
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Sato Taketomo
Graduate School Of Electronics And Information Engineering And Research Center For Integrated Quantu
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Sato Taketomo
Research Center For Integrated Quantum Electronics (rciqe) And Graduate School Of Information Scienc
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Sato Taketomo
Hokkaido Univ. Sapporo Jpn
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谷田部 然治
北海道大学 大学院情報科学研究科 および 量子集積エレクトロニクス研究センター
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Yatabe Zenji
Graduate School of Information Science and Technology, and Research Center for Integrated Quantum Electronics, Hokkaido University, Sapporo 060-0814, Japan
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谷田部 然治
北海道大学 量子集積エレクトロニクス研究センター
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