Jiang C | Hokkaido Univ. Sapporo Jpn
スポンサーリンク
概要
関連著者
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HASEGAWA Hideki
Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University
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Jiang C
Hokkaido Univ. Sapporo Jpn
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Jiang Chao
Research Center For Integrated Quantum Electronics And Graduate School Of Electronics And Informatio
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Hasegawa Hideki
Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University, North 13, West 8, Kita-ku, Sapporo 060-8628, Japan
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MURANAKA Tsutomu
Research Center for Integrated Quantum Electronics, Hokkaido University
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Muranaka T
Research Center For Integrated Quantum Electronics And Graduate School Of Electronics And Informatio
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Muranaka Tsutomu
Research Center for Integrated Quantum Electronics and Graduate School of Electronics and Information Engineering, Hokkaido University
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葛西 誠也
Research Center For Integrated Quantum Electronics And Graduate School Of Information Science And Te
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長谷川 英機
北海道大学量子集積エレクトロニクス研究センター
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KASAI Seiya
Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University
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Xie Y
Research Center For Interface Quantum Electronics (rciqe) And Graduate School Of Electronics And Inf
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Ito Akira
Research Center For Interface Quantum Electronics And Graduate School Of Electronics And Information
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TAKAHASHI Hiroshi
Research Center for Integrated Quantum Electronics, and Graduate School of Electronics and Informati
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XIE Yong-Gui
Research Center for Interface Quantum Electronics (RCIQE) and Graduate School of Electronics and Inf
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JIANG Chao
Research Center for Interface Quantum Electronics (RCIQE) and Graduate School of Electronics and Inf
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Takahasi Hiroshi
The Authors Are With Application Specific Products Worldwide Development Dsp Development Japan Tsuku
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Takahashi H
Graduate School Of Science And Engineering Ehime University
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Kasai Seiya
Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University, North 13, West 8, Sapporo 060-8628, Japan
著作論文
- Fabrication and Characterization of InGaAs/InAlAs Insulated Gate Pseudomorphic HENTs Having a Silicon Interface Control Layer
- Structural and Optical Properties of InGaAs Ridge Quantum Wire Arrays with Sub-micron Pitches Grown by Selective MBE on InP Substrates
- Structural and Optical Properties of 10nm-Class InGaAs Ridge Quantum Wire Arrays with Sub-Micron Pitches Grown by Selective MBE on Patterned InP Substrate
- Characterization and Optimization of Atomic Hydrogen Cleaning of InP Surface for Selective Molecular Beam Epitaxial Growth of InGaAs Quantum Structure Arrays
- Ridge Uniformity Improvement Toward Growth of Sub-10nm InGaAs Ridge Quantum Wires by Selective MBE on Patterned InP Substrate