In_<0.53>Ga_<0.47>As MISFETs Having an Ultrathin MBE Si Interface Control Layer and Photo-CVD SiO_2 Insulator (SOLID STATE DEVICES AND MATERIALS 1)
スポンサーリンク
概要
- 論文の詳細を見る
A novel In_<0.53>Ga_<0.47>As MIS structure having an ultrathin MBE Si interface control layer (ICL) between InGaAs and photo-CVD SiO_2, is described and applied to fabrication of MISFETs. XPS and electrical characterization show that Si ICL prevents selective oxidation of Inlays and reduces the interface state density. Depletion mode MISFETs gave an effective channel mobility of 1700 cm^2/V・s and excellent stability with drain current drift below 1 % up to 10^4 s.
- 社団法人応用物理学会の論文
- 1989-11-20
著者
-
Ohue Eiji
Department Of Electrical Engineering Faculty Of Engineering Hokkaido University
-
Hasegawa Hideki
Department Of Electrical Engineering Faculty Of Engineering Hokkaido University
-
Akazawa Masamichi
Department Of Electrical Engineering Faculty Of Engineering Hokkaido University
-
Akazawa Masamichi
Department Of Electrical Engineering Faculty Of Engineering And Research Center For Interface Quantu
-
Hasegawa Hideki
Department Of Computer Science And Electronics Kyushu Institute Of Technology
関連論文
- Early Mortality Following Intracerebral Infection with Tick-Borne Encephalitis Virus Oshima Strain in a Mouse Model
- Hydrogen sensing characteristics and mechanism of Pd/AlGaN/GaN Schottky diodes subjected to oxygen gettering
- 酸素プラズマ雰囲気中PLD法により堆積された炭素薄膜の評価
- C_7F_を用いたC:F膜の堆積とその評価 : ガス圧依存性および気体混合による効果
- Effects of Oxygen and Substrate Temperature on Properties of Amorphous Carbon Films Fabricated by Plasma-Assisted Pulsed Laser Deposition Method
- 金属薄膜による表面周期構造を利用したTHz波フィルタ(学生研究会/マイクロ波シミュレータ/一般)
- テラヘルツ領域用低損失コプレーナ導波路とそのEBGフィルタへの応用(学生研究会/マイクロ波シミュレータ/一般)
- 単電子回路によるボルツマンマシンデバイス
- Dark Current in Selectively Doped N-AlGaAs/GaAs CCDs
- GaAs(111)B基板上に形成されたAlGaAs/GaAs量子構造のSi界面制御層による表面不活性化(化合物半導体デバイスのプロセス技術)
- C-12-3 機能変更の可能な三次元セルラーニューラルネットワークLSI
- 機能変更の可能な三次元セルラーニューラルネットワーク回路
- C-12-33 νMOSを用いた三次元セルラーニューラルネットワーク回路
- ニューロンMOSを用いた3次元セルラーニューラルネットワーク回路の設計
- ニューロンMOSを用いた3次元セルラーニューラルネットワーク回路の設計
- ニューロンMOSを用いた3次元セルラーニューラルネットワーク回路の設計
- C-12-46 三次元セルラーニューラルネットワーク回路
- Nucleolin and the Packaging Signal, Ψ, Promote the Budding of Human Immunodeficiency Virus Type-1 (HIV-1)
- Meningeal large granular lymphocyte lymphoma
- Precisely Controlled Anodic Etching for Processing of GaAs based Quantum Nanostructures and Devices
- X-ray Photoelectron Spectroscopy Study of Silicon Interlayer Based Surface Passivation for AlGaAs/GaAs Quantum Structures on (111) B Surfaces
- Growth Behavior and Mechanism of Alkyl-Desorption-Limited Epitaxial Growth of GaAs on Exactly Oriented and Vicinal Substrates
- コプレーナ伝送線路を用いたサブテラヘルツ1次元周期構造の評価(テラヘルツ帯応用を開拓する材料・デバイス・システム技術)
- Migration-Enhanced Epitaxy of InP Using Polycrystalline InP as Phosphorus Source
- An Outbreak of Histoplasmosis among Healthy Young Japanese Women after Traveling to Southeast Asia
- A Computer Analysis of Effects of Annealing on InP Insulator-Semiconductor Interface Properties Using MIS C-V Curves : Surfaces, Interfaces and Films
- Electronic Properties of a Photochemical Oxide-GaAs Interface
- Hybrid Orbital Energy for Heterojunction Band Lineup
- InP High Mobility Enhancement MISFETs Using Anodically Grown Al_2O_3-Native Oxide/InP Interface : LATE NEWS
- Molecular Beam Epitaxy and Migration-Enhanced Epitaxial Growth of InP Using Polycrystalline InP as Phosphorus Source
- Novel Wire Transistor Structure with In-Plane Gate Using Direct Schottky Contacts to 2DEG
- Schottky Contacts on n-InP with High Barrier Heights and Reduced Fermi-Level Pinning by a Novel In Situ Electrochemical Process
- Depletion Characteristics of Direct Schottky Contacts to Quantum Wells Formed by In Situ Selective Electrochemical Process
- Arプラズマ雰囲気中でのレーザアブレーション炭素薄膜堆積
- レーザアブレーションプルーム(カーボン)の観測
- レーザアブレーション法による炭素薄膜の堆積
- Electronic Properties and Modeling of Lattice-Mismatched and Regrown GaAs Interfaces Prepared by Metalorganic Vapor Phase Epitaxy
- Free Carrier Profile Synthesis in MOCVD Grown GaAs by 'Atomic-Plane' Doping
- Deep Electron Traps in Undoped GaAs Grown by MOCVD
- n-Si(001)上に形成した極薄絶縁膜/Si界面の超高真空対応非接触C-V法による評価
- n-Si(001)上に形成した極薄絶縁膜/Si界面の超高真空対応非接触C-V法による評価
- Herpes encephalitis and paraneoplastic limbic encephalitis
- 単電子デバイスの準静的動作による断熱的スイッチング(半導体材料・デバイス)
- C-11-2 SOI表面に対する超高真空非接触C-V測定の適用
- QMESFETの提案と試作
- QMESFETの提案と試作
- C-11-8 SOIを用いた絶縁ゲート型MESFETの試作
- 単電子インバータ回路の設計と多値特性の導出
- C-8-2 多種の終端を持つBDDにもとづく磁束転送論理回路
- 量子ホップフィールドネットワークによる最適化問題の求解
- C-12-45 多値信号を利用したカラーペトリネットの回路化
- 量子ホップフィールドネットワークによる最適化問題の求解
- Quantum-Dot Logic Circuits Based on the Shared Binary-Decision Diagram
- Fluorinated Carbon Films with Low Dielectric Constant Made from Novel Fluorocarbon Source Materials by RF Plasma Enhanced Chemical Vapor Deposition
- Novel Surface Passivation Scheme for Compound Semiconductor Using Silicon Interface Control Layer and Its Application to Near-Surface Quantum Welts
- Rabies virus dissemination in neural tissues of autopsy cases due to rabies imported into Japan from the Philippines : Immunohistochemistry
- Cross-reactive antigenicity of nucleoproteins of lyssaviruses recognized by a monospecific antirabies virus nucleoprotein antiserum on paraffin sections of formalin-fixed tissues
- Dependencies of Transport and Photoluminescence on Morphology of Vacuum Deposited C_ Films
- Characterization of Deep Levels in Si-Doped In_xAl_As Layers Growrn by Molecular Beam Epitaxy
- Immunohistochemical Localization of Secretory Component(SC) and Carcinoembryonic Antigen(CEA) in Human Gastric Mucosa.
- A Computer Simulation of the Recombination Process at Semiconductor Surfaces
- Correlation between Photoluminescence and Surface-State Density on GaAs Surfaces Subjected to Various Surface Treatments : III-V Compound Semiconductors Devices and Materials(Solid State Devices and Materials 1)
- Poly-Si and a-Si: H MOS Photodiodes for Large-Area, High Spatial Resolution Photosensor Arrays : I-2: SILICON SOLAR CELLS (2) : Polycristalline Silicon
- Reappraisal of Si-Interlayer-Induced Change of Band Discontinuity as GaAs-AlAs Heterointerface Taking Account of Delta-Doping
- Neutralizing antibody against severe acute respiratory syndrome (SARS)-coronavirus spike is highly effective for the protection of mice in the murine SARS model
- Covalent bonded Gag multimers in human immunodeficiency virus type-1 particles
- Chiral Recognition of Ru(phen)^_3 by Anionic Cyclodextrins
- Iron-Doped Liquid-Phase-Epitaxial GaAs Layers with Negative Resistance Properties
- Growth of a (GaAs)_n/(InAs)_n Superlattice Semiconductor by Molecular Beam Epitaxy
- Fabrication of InGaAs Wires by Preferential Molecular Beam Epitaxy Growth on Corrugated InP Substrate
- Formation of ultrathin SiNx∕Si interface control double layer on (001) and (111) GaAs surfaces for ex situ deposition of high-k dielectrics
- Control of GaAs and InGaAs Insulator-Semiconductor and Metal-Semiconductor Interfaces by Ultrathin Molecular Beam Epitaxy Si Layers
- GaAs and In_Ga_As MIS Structures Having an Ultrathin Pseudomorphic Interface Control Layer of Si Prepared by MBE : Surfaces, Interfaces and Films
- Low Field Transport Properties of Two-Dimensional Electron Gas in Selectively Doped N-AlGaAs/GaInAs/GaAs Pseudomorphic Structures : Electrical Properties of Condensed Matter
- In Situ Surface State Spectroscopy by Photoluminescence and Surface Current Transport for Compound Semiconductors
- High Efficiency MOS Solar Cells by Anodic Oxidation Processes : II-1: COMPOUND SEMICONDUCTOR SOLAR CELLS (I)
- Trimethylgallium Supply without the Use of Bubbling in GaAs Growth by Metalorganic Vapor Phase Epitaxy
- In_Ga_As MISFETs Having an Ultrathin MBE Si Interface Control Layer and Photo-CVD SiO_2 Insulator (SOLID STATE DEVICES AND MATERIALS 1)
- A Common Energy Reference for DX Centers and EL2 Levels in III-V Compound Semiconductors
- High-Efficiency GaAs MOS Solar Cells by Anodization in Active Region : B-6: SOLAR CELLS AND AMORPHOUS DEVICES
- Control of GaAs Schottky Barrier Height by Ultrathin Molecular Beam Epitaxy Si Interface Control Layer
- Polycrystalline and Amorphous Si MOS Solar Cells by Anodization : I-2: SILICON SOLAR CELLS (2) : Polycristalline Silicon
- Amorphous Silicon Schottky and MIS Solar Cells by rf Sputtering and rf Glow Discharge Decomposition
- Multiple-Valued Inverter Using a Single-Electron-Tunneling Circuit (Special Issue on Integrated Electronics and New System Paradigms)
- MBE growth and in situ XPS characterization of silicon interlayers on (111)B surfaces for passivation of GaAs quantum wire devices
- 二分決定グラフにもとづく磁束転送論理回路 : 32ビット加算器の回路設計
- Monolithic Integration of GaAs Photoconductive Detectors and MESFETs with Distributed Coupling to Optical Fibers
- Mechanism of High Gain in GaAs Photoconductive Detectors under Low Excitation
- High-k Al2O3 MOS structures with Si interface control layer formed on air-exposed GaAs and InGaAs wafers
- Correlation between the Location of the Interface State Minimum at Insulator-Semiconductor Interfaces and Schottky Barrier Heights
- AlInN/GaN系ヘテロ構造の表面・界面評価 (電子デバイス)
- Non-Destructive Determination of Cr Concentration Distribution in Cr Doped Semi-Insulating GaAs Substrates
- On the Behaviors of the Cell Voltage during Anodic Oxidation of GaAs under Dark and Illuminated Conditions
- Quantum-Dot Logic Circuits Based on the Shared Binary-Decision Diagram