Growth of a (GaAs)_n/(InAs)_n Superlattice Semiconductor by Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
Molecular beam epitaxial growth of (GaAs)_n/(InAs)_n, superlattice semiconductors is reported. Reflection electron diffraction was used to monitor the growth process. Successful growth of (GaAs)_n/(InAs)_n (n=1, 2) on InP substrate was confirmed by X-ray diffraction.
- 社団法人応用物理学会の論文
- 1985-09-20
著者
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Takama Toshihiko
Department Of Applied Physics Faculty Of Engineering Hokkaido University
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Hasegawa Hideki
Department Of Electrical Engineering Faculty Of Engineering Hokkaido University
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Ohno Hideo
Department Of Chemistry Faculty Of Science Kyoto University
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Katsumi Ryuichi
Department of Electrical Engineering, Faculty of Engineering, Hokkaido University
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Katsumi Ryuichi
Department Of Electrical Engineering Faculty Of Engineering Hokkaido University
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Hasegawa Hideki
Department Of Computer Science And Electronics Kyushu Institute Of Technology
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