Correlation between Photoluminescence and Surface-State Density on GaAs Surfaces Subjected to Various Surface Treatments : III-V Compound Semiconductors Devices and Materials(<Special Section>Solid State Devices and Materials 1)
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概要
- 論文の詳細を見る
Relationship between band edge photoluminescence (PL) and surface states is rigorously analyzed on computer, using the disorder-induced gap state (DIGS) model, and is compared with experiments on GaAs surfaces subjected to various treatments. It is shown that PL intensity is directly correlated with the effective surface recombination velocity, but is not necessarily directly correlated with the surface-state density (N_<ss>) itself. PL enhancement by photochemical oxidation and by Na_2S deposition is proposed to be due to a fixed negative charge, whereas photochemical treatment in HCl leads to significant reduction in N_<ss>.
- 社団法人応用物理学会の論文
- 1988-11-20
著者
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Hasegawa Hideki
Department Of Electrical Engineering Faculty Of Engineering Hokkaido University:department Of Electr
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Ohno H
Jaeri-riken Spring-8 Project Team
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Ohno Hideo
Molten Material Laboratory Division Of Nuclear Fuel Research Japan Atomic Energy Research Institute
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Ohno Hideo
Department Of Gastroenterology Red Cross Hospital
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Ohno Hideo
Laboratory For Electronic Intelligent Systems
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KONISHI Seiichi
Department of Pathology,School of Dentistry and Aichi-Gakuin University
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Ishii H
Sci. Univ. Tokyo Chiba‐ken Jpn
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Saitoh Toshiya
Department Of Electrical Engineering Faculty Of Engineering Hokkaido University
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Saitoh Toshiya
Department Of Electrical Engineering And Research Center For Interface Quantum Electronics Hokkaido
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Konishi Seiichi
Department Of Electrical Engineering Faculty Of Engineering Hokkaido University
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Hasegawa Hideki
Department Of Electrical Engineering Faculty Of Engineering Hokkaido University
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ISHII Hirotatsu
Department of Electrical Engineering, Faculty of Engineering Hokkaido University
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Ohno Hideo
Department Of Chemistry Faculty Of Science Kyoto University
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Hasegawa Hideki
Department Of Computer Science And Electronics Kyushu Institute Of Technology
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SAITOH Toshiya
Department of Electrical Engineering, Faculty of Engineering Hokkaido University
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