Ishii H | Sci. Univ. Tokyo Chiba‐ken Jpn

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著作論文

Improving the Characteristics of Ultra-Thin-Film Fully-Depleted Metal-Oxide-Semiconductor Field Effect Transistors on SIMOX (Separation by IMplanted OXygen) by Selective Tungsten Deposition on Source and Drain Region
300-kilo-Gate Sea-of-Gate Type Gate Arrays Fabricated Using 0.25-μm-Gate Ultra-Thin-Film Fully-Depleted Complementary Metal-Oxide-Semiconductor Separation by IMplanted OXygen (CMOS/SIMOX) Technology with Tungsten-Covered Source and Drain
Anomalous Electrical Characteristics of Epitaxial InN Films Having a High Electron Comcentratiorn at Very Low Temperature
Application of Carbonaceous Material for Fabrication of Nano-Wires with a Scanning Electron Microscopy
Correlation between Photoluminescence and Surface-State Density on GaAs Surfaces Subjected to Various Surface Treatments : III-V Compound Semiconductors Devices and Materials(Solid State Devices and Materials 1)
Effects of Impurity between Epitaxial Layer and Substrate on Current Transient for GaAs Metal-Semiconductor Field-Effect Transistors
Pressure Balancing Structure for Fiber-Optic Flexural Disk Acoustic Sensor
Control of GaAs and InGaAs Insulator-Semiconductor and Metal-Semiconductor Interfaces by Ultrathin Molecular Beam Epitaxy Si Layers
GaAs and In_Ga_As MIS Structures Having an Ultrathin Pseudomorphic Interface Control Layer of Si Prepared by MBE : Surfaces, Interfaces and Films

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