Yugo S | Univ. Electro‐communications Tokyo
スポンサーリンク
概要
関連著者
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YUGO Shigemi
University of Electro-Communications
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Yugo S
Univ. Electro‐communications Tokyo
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Kimura T
Photonics Research Institute National Institute Of Advanced Industrial Science And Technology
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Kimura Tadamasa
Department of Electronics Engineering, University of Electro-Communications
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Kimura Tadamasa
Department Of Applied Electronics The University Of Electro-communications
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Yugo Shigemi
Department of Electronics, Faculty of Electro-comunications, The University of Electro-Communication
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Yugo Shigemi
Department Of Applied Electronics The University Of Electro-communications
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ADACHI Yoshio
Department of Applied Electronics, University of Electro-Communications
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Adachi Y
Yokohama National Univ. Yokohama Jpn
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Kawamura Akira
Department of Cardiology, Faculty of medicine, Fukuoka University
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Kawamura Akira
Department Of Cardiology Fukuoka University Faculty Of Medicine
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Morita T
Faculty Of Technology Tokyo University Of Agriculture And Technology
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Kimura Tadamasa
University Of Electro-communications (uec)
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Kimura Tadamasa
University Of Electro-communications
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MORITA Tetsuo
Sumitomo Electric Industries, Ltd.
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KAMIYA Takeshi
University of Tokyo
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LUO Ji-Kui
Department of Applied Electronics, University of Electro-Communications
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TATEBE Yuki
Department of Applied Electronics, Faculty of Electro-Communications, University of Electro-Communic
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Luo Ji-kui
Department Of Applied Electronics University Of Electro-communications:(present Address) Hokkaido Un
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Tatebe Yuki
Department Of Applied Electronics Faculty Of Electro-communications University Of Electro-communicat
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Yamamura Shin'ichi
University Of Electro-communications
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Morita Tetsuo
Sumitomo Electric Industries Ltd.
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Kawamura Akira
Department Of Applied Electronics Faculty Of Electro-communications University Of Electro-communicat
著作論文
- Realization of Fast InGaAs Photoconductive Response by Ion Implantation and Annealing with No Degradation of Peak Responsivity
- Deep Levels in Argon-Implanted and Annealed Indium Phosphide
- Low-Temperature Formation of β-Type Silicon Carbide by Jon-Beam Mixing