Realization of Fast InGaAs Photoconductive Response by Ion Implantation and Annealing with No Degradation of Peak Responsivity

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1990-07-20

著者

• Morita T

  Faculty Of Technology Tokyo University Of Agriculture And Technology

• Kimura Tadamasa

  University Of Electro-communications (uec)

• Kimura Tadamasa

  University Of Electro-communications

• MORITA Tetsuo

  Sumitomo Electric Industries, Ltd.

• YUGO Shigemi

  University of Electro-Communications

• KAMIYA Takeshi

  University of Tokyo

• Yugo S

  Univ. Electro‐communications Tokyo

• Yamamura Shin'ichi

  University Of Electro-communications

• Morita Tetsuo

  Sumitomo Electric Industries Ltd.

関連論文

• Toward Small Size Waveguide Amplifiers Based on Erbium Silicate for Silicon Photonics
• Realization of Fast InGaAs Photoconductive Response by Ion Implantation and Annealing with No Degradation of Peak Responsivity
• ESR of Pyro-Graphite Irradiated by High Energy Ions
• Deep Levels in Argon-Implanted and Annealed Indium Phosphide
• Low-Temperature Formation of β-Type Silicon Carbide by Jon-Beam Mixing

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