Injected Carrier Instability in High Electric Field
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概要
- 論文の詳細を見る
The moving domain caused by double injection was detected in n-type Ge at high electric field. This phenomenon is closely related to the current instability observed. It was found that the period of oscillation is determined by the transit time of the density perturbation through a sample. The dependence of the oscillation frequency on current density is explained by the variation of the ambipolar drift velocity. The transit time observed is in qualitative agreement with the theoretical results calculated from the ambipolar drift velocity.
- 社団法人日本物理学会の論文
- 1972-04-05
著者
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ADACHI Yoshio
Department of Applied Electronics, University of Electro-Communications
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Arizumi Tetsuya
Department Of Electronic Engineering Faculty Of Engineering Nagoya University
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Adachi Yoshio
Department Of Electronics Faculty Of Engineering Nagoya University:(present Address) Semiconductor A
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