Negative Resistance Due to Impact Ionization in Irradiated Germanium
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概要
- 論文の詳細を見る
When n-type Ge wafers and diodes, fabricated from the same material are irradiated with a total flux of about 10^<15> electrons/cm^2 at 9 MeV, their V-I characteristics behave normally at room temperature, but at lower temperatures they show sharp breakdown phenomena accompanied with the negative resistance. The onset electric field of breakdown, the critical field E_c is about 950, 450 and 220 V/cm at the temperature of 4.2°, 77° and 220°K respectively, and the sustaining field E_s, the field after breakdown, is nearly a constant of 100±20 V/cm, independently on the temperature. The properties of the irradiated germanium are very similar to those of a cryosar. E_c and E_s are calculated theoretically by applying Kurosawa's theory on the low temperature breakdown in compensated germanium and the experimental results are well explained by his theory.
- 社団法人日本物理学会の論文
- 1968-07-05
著者
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Wada Takao
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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FUKUOKA Yutaka
Suzuka College of Technology
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Fukuoka Yutaka
Department Of Electrical Engineering Faculty Of Science And Technology Keio University
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Arizumi Tetsuya
Faculty Of Engineering Nagoya University
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Arizumi Tetsuya
Department Of Electronic Engineering Faculty Of Engineering Nagoya University
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Wada Takao
Department Of Applied Electronics Daido Institute Of Technology
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