Recombination Domain Instability in High Energy Electron Irradiated Germanium

概要

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When a bar of n-type germanium (1〜2Ω-cm) is irradiated with a total flux of about 10^<15>〜10^<16> electrons/cm^2 at 8.5 MeV, domains of high electric field in the irradiated crystal appear at a high field above 350 V/cm and 77 K. At sufficiently high electric fields, current-valtage characteristics, estimated by observing an instantaneous current density and a time constant associated with the trapping of hot electrons at defect centers, have a voltage-controlled differential negative resistance region. So the high field domain is formed by the build-up of the space charge boundaries. The velocity of moving domain ranged from 10^5 cm/sec to 2×10^6 cm/sec, depending upon the light intensity.
社団法人応用物理学会の論文
1972-07-05