A New Gradually Graded P-i-N Structure Produced by Electron Irradiation in Germanium (II) : Space Charge Limited Current

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概要

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• In a gradually graded p-i (high resistivity i region)-n structure with several deep recombination centers of about 2×10^<15>cm^<-3> which are produced in a germanium slice (800μm in thickness) by the high energy electron irradiation, the current-voltage characteristics at a temperature below 160K is composed of an Ohmic, a high injection square law and a space-charge-limited cube law regions. The Lampert and Rose's theory for the double injection into a semiconductor is satisfactorily applied to the observed current-voltage characteristics.

• 社団法人応用物理学会の論文
• 1972-03-05

著者

• Wada Takao

  Faculty Of Engineering Mie University

• FUKUOKA Yutaka

  Suzuka College of Technology

• Arizumi Tetsuya

  Faculty Of Engineering Nagoya University

関連論文

• Cryosar-Like Behaviour of Electron-Irradiated GaP LED
• Negative Resistance due to Impact Ionization in Electron Irradiated GaP Diodes
• A New Gradually Graded P-I-N Structure Produced by Electron Irradiation in Germanium (III) Magnetoresistance
• Recombination Domain Instability in High Energy Electron Irradiated Germanium
• A New Gradually Graded P-i-N Structure Produced by Electron Irradiation in Germanium (II) : Space Charge Limited Current
• A New Gradually Graded P-i-N Structure Produced by Electron Irradiation in Germanium (I) : Formation
• Negative Resistance Due to Impact Ionization in Irradiated Germanium
• Decrease of Built-in Voltage in Tunnel Diodes Caused by Irradiation

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