Negative Resistance due to Impact Ionization in Electron Irradiated GaP Diodes

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1976-12-05

著者

• Wada Takao

  Faculty Of Engineering Mie University

• Kakehi Masahiro

  Faculty Of Engineering Mie University

• Uemura Sashiro

  Ise Electronics Central Laboratory

• Uemura Sashiro

  Ise Electromlcs Corporation

• FUKUOKA Yutaka

  Suzuka College of Technology

• KIYOZUMI Kentaro

  Ise Electronics Central Laboratory

• wada Takao

  Faculty of Engineering, Mie University

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• Cryosar-Like Behaviour of Electron-Irradiated GaP LED
• Negative Resistance due to Impact Ionization in Electron Irradiated GaP Diodes
• A New Gradually Graded P-I-N Structure Produced by Electron Irradiation in Germanium (III) Magnetoresistance
• Recombination Domain Instability in High Energy Electron Irradiated Germanium
• A New Gradually Graded P-i-N Structure Produced by Electron Irradiation in Germanium (II) : Space Charge Limited Current
• A New Gradually Graded P-i-N Structure Produced by Electron Irradiation in Germanium (I) : Formation
• Negative Resistance Due to Impact Ionization in Irradiated Germanium
• Decrease of Built-in Voltage in Tunnel Diodes Caused by Irradiation

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