A New Gradually Graded P-i-N Structure Produced by Electron Irradiation in Germanium (I) : Formation

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概要

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• In an n-type germanium wafer of 110μm in thickness, exposed to a total flux of about 10^<16> electrons/cm^2 at 8 MeV, the sign of the Hall coefficient, measured as a function of thickness of the wafer, converts from negative to positive at a distance of about 50μ from the surface. The formation of a gradually graded p-i (high resistivity i region)-n structure can be fairly well explained by taking account of the deep energy levels associated with the defects, the condition of charge neutrality and the range of the electrons.

• 社団法人応用物理学会の論文
• 1972-03-05

著者

• Wada Takao

  Faculty Of Engineering Mie University

• FUKUOKA Yutaka

  Suzuka College of Technology

• Arizumi Tetsuya

  Faculty Of Engineering Nagoya University

関連論文

• Cryosar-Like Behaviour of Electron-Irradiated GaP LED
• Negative Resistance due to Impact Ionization in Electron Irradiated GaP Diodes
• A New Gradually Graded P-I-N Structure Produced by Electron Irradiation in Germanium (III) Magnetoresistance
• Recombination Domain Instability in High Energy Electron Irradiated Germanium
• A New Gradually Graded P-i-N Structure Produced by Electron Irradiation in Germanium (II) : Space Charge Limited Current
• A New Gradually Graded P-i-N Structure Produced by Electron Irradiation in Germanium (I) : Formation
• Negative Resistance Due to Impact Ionization in Irradiated Germanium
• Decrease of Built-in Voltage in Tunnel Diodes Caused by Irradiation

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