Layer Tilt Angle of Chevron Structure in Surface-Stabilized Ferroelectric Liquid Crystals

スポンサーリンク

概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1992-05-15

著者

• ITOH Nobuyuki

  Semiconductor Company, Toshiba Corporation

• Wada T

  Department Of Materials Chemistry Ryukoku University

• Itoh N

  Osaka Prefecture Univ. Osaka Jpn

• Itoh N

  Institute Of Advanced Material Study And Department Of Molecular Science And Technology Graduate Sch

• Wada Takao

  Department Of Electrical And Computer Engineering Nagoya Institute Of Technology

• Itoh Nobuyuki

  Semiconductor Company Toshiba Corporationthe Authors Are With Semiconductor Company Toshiba Corporat

• Miyoshi S

  Univ. Tokyo Tokyo Jpn

• Wada T

  Central Research Laboratories Matsushita Electric Industrial Co. Ltd.

• ITOH Nobuyuki

  Central Research Laboratories, SHARP Corporation

• KODEN Mitsuhiro

  Central Research Laboratories, SHARP Corporation

• MIYOSHI Shuji

  Central Research Laboratories, SHARP Corporation

• WADA Tomio

  Central Research Laboratories, SHARP Corporation

• NARUTAKI Yozo

  Liquid Crystal Laboratories, SHARP Corporation

• SHINOMIYA Tokihiko

  Liquid Crystal Laboratories, SHARP Corporation

• Wada T

  Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology

• Koden Mitsuhiro

  Central Research Laboratories Sharp Corporation

• Narutaki Yozo

  Liquid Crystal Laboratories Sharp Corporation

• Itoh N

  Semiconductor Company Toshiba Corporation

• Shinomiya Tokihiko

  Liquid Crystal Laboratories Sharp Corporation

関連論文

• A 0.13µm CMOS Bluetooth EDR Transceiver with High Sensitivity over Wide Temperature Range and Immunity to Process Variation
• Chemical and Structural Characterization of Cu(In, Ga)Se_2/Mo Interface in Cu(In, Ga)Se_2 Solar Cells
• Surface Characterization of Chemically Treated Cu(In, Ga)Se_2 Thin Films
• Effects of Proton Implantation on Amorphous SiO_2 Predamaged by Si Implantation
• Anomalous Defect Processes in Silicon-Implanted SiO_2
• Electron Paramagnetic Resonance Studies of Defects in Silicon-Implanted SiO_2
• Growth Mechanism in the Metalorganic Vapor Phase Epitaxy of Metastable GaP_N_x Alloys: A Growth Interruption Study
• Electron Temperature Measurement by Electron Cyclotron Emission from Tandem Mirror GAMMA 10
• A 0.13μm CMOS Bluetooth EDR Transceiver with High Sensitivity over Wide Temperature Range and Immunity to Process Variation
• Effects of Anthracene Doping on Electrical and Light-Emitting Behavior of 8-Hydroxyquinoline-Aluminum-Based Electroluminescent Devices
• Preparation of Conductive and Transparent Thin Films by Argon Ion Beam Sputtering of Zinc Oxide in Atmosphere Containing Hydrogen
• High Energy Spectroscopy of Thin Films of Chalcopyrite Structure Cu-In-Se and Related Materials
• THE RELATION OF HYPERKALEMIA TO THE ELECTROCARDIOGRAPHIC CHANGES CAUSED BY ACIDEMIA
• High Sensitivity 900-MHz ISM Band Transceiver(Analog Circuit Techniques and Related Topics)
• Formation of Cubic GaN on (111)B GaAs by Metal-Organic Vapor-Phase Epitaxy with Dimethylhydrazine
• Selective Growth of Cubic GaN in Small Areas on Patterned GaAs(100) Substrates by Metalorganic Vapor Phase Epitaxy
• Transmission Electron Microscope Observation of Cubic GaN Grown by Metalorganic Vapor Phase Epitaxy with Dimethylhydrazine on (001) GaAs
• Four States of Surface-Stabilized Ferroelectric Liquid Crystal with Parallel Rubbing
• Effect of Surface Pretilt Angle on Optical Properties of Surface-Stabilized Ferroelectric Liquid Crystals
• Physical Vapor Deposition of Hexagonal and Tetragonal CuIn_5Se_8 Thin Films
• Microstructure of Cu(In,Ga)Se_2 Films Deposited in Low Se Vapor Pressure
• MoSe_2 layer formation at Cu(In, Ga)Se_2/Mo Interfaces in High Efficiency Cu(In_Ga_x)Se_2 Solar Cells
• Preparation of Device-Quality Cu(In, Ga)Se_2 Thin Films Deposited by Coevaporation with Composition Monitor
• Preparation of Ordered Vacancy Chalcopyrite-Type CuIn_3Se_5 Thin Films
• Dissociative Excitation Reaction of CH_3CN with the Discharge Flow of Ar : Prediction of the [N]/([N]+[C]) Ratio of Hydrogenated Amorphous Carbon Nitride Films in the Desiccated System
• Mechanism of Formation of the CN(B^2Σ^+) State from Dissociative Excitation Reaction of BrCN with Electron Cyclotron Resonance Plasma of Ar
• Limitation of Nitrogen Incorporation into the Hydrogenated Amorphous Carbon Nitride Films Formed from the Dissociative Excitation Reaction of CH_3CN
• Hardness and Structure of a-CN_x Films Synthesized by Chemical Vapor Deposition
• Annealing Effect of High-T_c Superconducting Y(Ba_Sr_x)_2Cu_3O_ Ceramics
• Preparation Chalcopyrite-type Semiconductor Films by Sulfuration of Oxide Films
• SiO_2 Film Growth from ArF Laser Photolysis of Si_2H_6 and N_2O in a Perpendicular Irradiation Configuration
• Deposition of SiO_2 Films from ArF Laser Photolysis of Si_2H_6/N_2O Mixtures in a Parallel Irradiation Configuration
• Deposition of SiO_2 Thin Films by Reactive Excimer Laser Ablation
• Deposition of SiO_2 Films from ArF Laser Photolysis of SiH_4/N_2O Mixtures
• Phases and Third-Order Optical Nonlinearities in Tetravalent Metallophthalocyanine Thin Films
• Third-Order Nonlinear Optical Properties in Soluble Phthalocyanines with Tert-Butyl Substituents
• Third-Order Optical Nonlinearities in Porphyrins with Extended π-Electron Systems
• ESR Centers in Silicon Monoxide
• Annealing Effects of Paramagnetic Defects Introduced near Silicon Surface
• Influence of Deformation of Smectic Layer Structure on Dielectric Behavior of Ferroelectric Liquid Crystal
• Ferroelectric Liquid Crystal Mixtures Containing Chiral Pyranose Compounds for Response-Voltage Minimum Mode
• Layer Tilt Angle of Chevron Structure in Surface-Stabilized Ferroelectric Liquid Crystals
• Models of Molecular Orientation in Surface-Stabilized Ferroelectric Liquid Crystals with High-Pretilt Aligning Film
• Conduction Band-Tail Estimated from the Temperature Dependence of X_1-X_3 Threshold Energy in Heavily-Doped n-GaP : Semiconductors and Semiconductor Devices
• Temperature Dependence of X_1-X_3 Splitting Energy in Lightly Doped GaP
• Spin-polarized Tunneling in Ultrasmall Vertical Ferromagnetic Tunnel Junctions
• Excitation Frequency Effects on Stabilized Efficiency of Large-Area Amorphous Silicon Solar Cells Using Flexible Plastic Film Substrate
• Working Pressure Effects on Deposition of Large-Area Microcrystalline Silicon Films on Flexible Plastic Substrate at 130℃ : Semiconductors
• Excitation Frequency Effects on Large-Area Hydrogenated Amorphous Silicon Film Deposition Process Using Flexible Film Substrate : Semiconductors
• X-Ray Photoelectron Spectroscopy Study of a Self-Assembled Monolayer of Thiophene Thiol
• Fabrication of Nanometer-Scale Vertical Metal-Insulator-Metal Tunnel Junctions Using a Silicon-on-Insulator Substrate
• Fabrication of Nanometer-Scale Vertical MIM Tunnel Junctions Using a Double-Layered Inorganic Resist
• Preparation of Polythiphene Copolymer for Third Order Nonlinear Optics
• SiO_2/c-Si Bilayer Electron-Beam Resist Process for Nano-Fabrication
• SiO_2/Poly-Si Multilayered Electron Beam Resist Process for Fabrication of Ultrasmall Tunnel Junctions
• Annealing Behavior of Irradiation-Induced Damagein an AlGaAs/GaAs Heterostructure by Low-Ertergy Electron Beam
• Novel Switching with Gray Scale in Surface-Stabilized Ferroelectric Liquid Crystal Devices
• Electron Beam Doping by Superdiffusion in Unirradiated Regions (X
• Mechanism of Nitrogen Incorporation into Amorphous-CN_x Films Formed by Plasma-Enhanced Chemical-Vapor Deposition of the Doublet and Quartet States of the CN Radical
• Substitution Effect of Sr for Ba of High-T_c Superconducting YBa_2Cu_3O^ Ceramics
• Vapor Growth of AN-Doped ZnTe by the Closed-Tube Method
• Optical Characterization of GaSb-Based Ternary and Quaternary Alloys Grown by Liquid-Phase Epitaxy at Low Temperatures
• Photoluminescence Study of Al_xGa_Sb Grown by Liquid-Phase Epitaxy
• Direct Comparison of Quantized Hall Resistance between Si-MOSFET and GaAs/AlGaAs Heterostructure Devices on the Same Sample Holder
• A Versatile Chromatographic Procedure for Purifying PS II Reaction Center Complex from Digitonin Extracts of Spinach Thylakoids
• A 5.8-GHz ETC Transceiver Using SiGe-BiCMOS(Active Devices/Circuits,Microwave and Millimeter-Wave Technology)
• Scalable Parasitic Components Model of CMOS for RF Circuit Design
• A 38% Tuning Range 6-GHz Fully Integrated VCO(Special Issue on High-Performance Analog Integrated Circuits)
• Synthesis of Amorphous Carbon Nitride Films Using Dissociative Excitation Reaction
• Effects of Electron Irradiation on Two-Dimensional Electron Gas in AlGaAs/GaAs Heterostructure
• Enhancement of Emission of Si Atoms from Si(100) Surface by Low-Rate Br Exposure : A New Model of Dry Etching Based on Defect-Adsorbate Interaction
• Laser-Induced Electronic Emissions of Si Atoms from Si(100) Surfaces
• The States of Surface-Stabilized Ferroelectric Liquid Crystal with High-Pretilt Aligning Film
• A BASIC STUDY OF THE HANSSEN TECHNIQUE FOR EVALUATION OF SINGLE NEPHRON GLOMERULAR FILTRATION RATE
• Electrochromic Behavior of Amorphous Copperphthalocyanine Thin Films
• Two-Dimensional Electron Gas in an n^+-GaAs/Undoped AlGaAs/Undoped GaAs SIS Structure
• Optimum B^+ Dose in S/D Regions to Improve Schottky p-Channel MOSFET Characteristics
• Improvement of Schottky MOSFET Characteristics by B^+ Implantation in Active Region
• Calculation of Bond Lengths in Si_Ge_x Alloys Based on the Valence-Force-Field Model
• A SiGe BiCMOS VCO IC with Highly Linear Kvco for 5-GHz-Band Wireless LANs(Analog Circuits and Related SoC Integration Technologies)
• Optical Absorption and Modification of Band Edges in Irradiated GaP
• Effect of Molecular Structure of Chiral Fluorinated Compounds on Spontaneous Polarization of Ferroelectric Liquid Crystals
• Tilt Angle Behavior of Smectic C Phase in Binary Systems
• Ferroelectric Liquid Crystals Incorporating the Optically Active γ-Lactone Ring
• Heteroepitaxial Growth of ZnTe on GaSb
• Negative Resistance Due to Impact Ionization in Irradiated Germanium
• Decrease of Built-in Voltage in Tunnel Diodes Caused by Irradiation
• Low Voltage Low Phase Noise CMOS VCO and Its Flicker Noise Influence(Devices and Circuits for Next Generation Multi-Media Communication Systems)
• Energy Spectra of Displaced Atoms in High-Energy Electron-Irradiated Si: Views on Electron Beam Doping and Damage Factor

もっと見る 閉じる

スポンサーリンク