High Sensitivity 900-MHz ISM Band Transceiver(<Special Section>Analog Circuit Techniques and Related Topics)

概要

論文の詳細を見る
Integrated 900-MHz ISM band transceiver LSI for analog cordless telephone has been realized by cost-effective process technology with sufficient performance. This LSI consisted of fully integrated transceiver, from RF-LNA to audio amplifier for RX chain, from microphone's amplifier to RF-PA for TX chain, and integrated RX- and TX-LO consisting of PLLs and VCOs. In view of narrow signal bandwidth with analog modulation, extremely low phase noise at low offset frequency from carrier was required for integrated VCO. Also, in view of fully duplex operations, signal isolation between TX and RX was required. Despite such a high integration and high performance, chip cost had to be minimized for low-cost applications. The 12-dB SINAD RX sensitivity was-111.2dBm, the output power of TX was +3dBm, and the phase noise of integrated VCO was -77dBc/Hz at 3kHz offset away from carrier. The current consumption at fully duplex operation was 76mA at 3.6V power supply. The chip was realized by 0.8μm standard silicon BiCMOS process.
社団法人電子情報通信学会の論文
2005-02-01