A 0.13µm CMOS Bluetooth EDR Transceiver with High Sensitivity over Wide Temperature Range and Immunity to Process Variation
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概要
- 論文の詳細を見る
A 2.4GHz 0.13µm CMOS transceiver LSI, supporting Bluetooth V2.1 + enhanced data rate (EDR) standard, has achieved a high reception sensitivity and high-quality transmission signals between −40°C and +90°C. A low-IF receiver and direct-conversion transmitter architecture are employed. A temperature compensated receiver chain including a low-noise amplifier accomplishes a sensitivity of −90dBm at frequency shift keying modulation even in the worst environmental condition. Design optimization of phase noise in a local oscillator and linearity of a power amplifier improves transmission signals and enables them to meet Bluetooth radio specifications. Fabrication in scaled 0.13µm CMOS and operation at a low supply voltage of 1.5V result in small area and low power consumption.
著者
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AGAWA Kenichi
Semiconductor Company, Toshiba Corporation
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ISHIZUKA Shinichiro
Semiconductor Company, Toshiba Corporation
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MAJIMA Hideaki
Semiconductor Company, Toshiba Corporation
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KOBAYASHI Hiroyuki
Semiconductor Company, Toshiba Corporation
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KOIZUMI Masayuki
Semiconductor Company, Toshiba Corporation
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NAGANO Takeshi
Semiconductor Company, Toshiba Corporation
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ARAI Makoto
Semiconductor Company, Toshiba Corporation
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SHIMIZU Yutaka
Semiconductor Company, Toshiba Corporation
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MAKI Asuka
Semiconductor Company, Toshiba Corporation
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URAKAWA Go
Semiconductor Company, Toshiba Corporation
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TERADA Tadashi
Semiconductor Company, Toshiba Corporation
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ITOH Nobuyuki
Semiconductor Company, Toshiba Corporation
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HAMADA Mototsugu
Semiconductor Company, Toshiba Corporation
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FUJII Fumie
Semiconductor Company, Toshiba Corporation
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KATO Tadamasa
Semiconductor Company, Toshiba Corporation
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YOSHITOMI Sadayuki
Semiconductor Company, Toshiba Corporation
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OTSUKA Nobuaki
Semiconductor Company, Toshiba Corporation
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