A 5.8-GHz ETC Transceiver Using SiGe-BiCMOS(Active Devices/Circuits,<Special Section>Microwave and Millimeter-Wave Technology)
スポンサーリンク
概要
- 論文の詳細を見る
A fully integrated 5.8GHz ETC transceiver LSI has been developed. The transceiver consists of LNA, down-conversion MIX, ASK detector, ASK modulator, DA VCO, and ΔΣ-fractional-N PLL. The features of the transceiver are integrated matching circuitry for LNA input and for DA output, ASK modulator with VGA for local signal control to avoid local leakage and to keep suitable modulation index, and LO circuitry consisting of ΔΣ-fractional-N PLL and interference-robust ∞-shape inductor VCO to diminish magnetic coupling from any other circuitry. Use of these techniques enabled realization of the input and output VSWR of less than 1.25, modulation index of over 95%, and enough qualified TX signals. This transceiver was manufactured by 1P3M SiGe-BiCMOS process with 47GHz cut-off frequency.
- 2007-09-01
著者
-
ITOH Nobuyuki
Semiconductor Company, Toshiba Corporation
-
Itoh Nobuyuki
Semiconductor Company Toshiba Corp.
-
KIKUTA Makoto
Toshiba Microelectronics Corporation
-
Kikuta Makoto
Toshiba Microelectronics Corp.
-
NAGATA Minoru
Semiconductor Company, Toshiba Corp.
-
MASUOKA Hideaki
Semiconductor Company, Toshiba Corp.
-
FUKASE Shin-ichi
Semiconductor Company, Toshiba Corp.
-
MORITA Makoto
Toshiba Microelectronics Corp.
-
Masuoka Hideaki
Semiconductor Company Toshiba Corp.
-
Nagata Minoru
Semiconductor Company Toshiba Corp.
-
Fukase Shin-ichi
Semiconductor Company Toshiba Corp.
関連論文
- A 0.13µm CMOS Bluetooth EDR Transceiver with High Sensitivity over Wide Temperature Range and Immunity to Process Variation
- A 0.13μm CMOS Bluetooth EDR Transceiver with High Sensitivity over Wide Temperature Range and Immunity to Process Variation
- High Sensitivity 900-MHz ISM Band Transceiver(Analog Circuit Techniques and Related Topics)
- Four States of Surface-Stabilized Ferroelectric Liquid Crystal with Parallel Rubbing
- Effect of Surface Pretilt Angle on Optical Properties of Surface-Stabilized Ferroelectric Liquid Crystals
- Influence of Deformation of Smectic Layer Structure on Dielectric Behavior of Ferroelectric Liquid Crystal
- Layer Tilt Angle of Chevron Structure in Surface-Stabilized Ferroelectric Liquid Crystals
- Models of Molecular Orientation in Surface-Stabilized Ferroelectric Liquid Crystals with High-Pretilt Aligning Film
- A 5.8-GHz ETC Transceiver Using SiGe-BiCMOS(Active Devices/Circuits,Microwave and Millimeter-Wave Technology)
- Scalable Parasitic Components Model of CMOS for RF Circuit Design
- A 38% Tuning Range 6-GHz Fully Integrated VCO(Special Issue on High-Performance Analog Integrated Circuits)
- The States of Surface-Stabilized Ferroelectric Liquid Crystal with High-Pretilt Aligning Film
- A SiGe BiCMOS VCO IC with Highly Linear Kvco for 5-GHz-Band Wireless LANs(Analog Circuits and Related SoC Integration Technologies)
- Low Voltage Low Phase Noise CMOS VCO and Its Flicker Noise Influence(Devices and Circuits for Next Generation Multi-Media Communication Systems)
- Low Voltage Low Phase Noise CMOS VCO and Its Flicker Noise Influence
- A Spurious Suppression Technique for Fractional-N Frequency Synthesizers