Low Voltage Low Phase Noise CMOS VCO and Its Flicker Noise Influence(<Special Issue>Devices and Circuits for Next Generation Multi-Media Communication Systems)
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概要
- 論文の詳細を見る
The low phase noise, low supply voltage 1.3GHz CMOS VCO has been realized by 0.25μm standard CMOS technology without any trimming and any tuning. The phase noise characteristics of -109dBc/Hz and -123dBc/Hz at 100kHz offset and 500kHz offset were achieved from carrier, respectively, with 1.3GHz oscillation frequency at 1.4V supply voltage. The performance of 1.4V supply voltage phase noise was superior to that of 2.0V supply voltage phase noise due to low output impedance current source. The tuning ranges of 13.3%, 16.6%, and 20.1% for 1.4V, 1.8V, and 2.0V supply voltage were achieved, respectively. The amplifier consisted of one pair of PMOS differential stage with large gate length NMOS current source to realize low supply voltage operation and to avoid flicker noise contribution for phase noise. The on-chip spiral inductor consisted of three terminals arranged in a special shape to obtain high Q and small chip area. The power dissipation of this VCO was 22.4 mW without buffer amplifier.
- 社団法人電子情報通信学会の論文
- 2003-06-01
著者
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ITOH Nobuyuki
Semiconductor Company, Toshiba Corporation
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Itoh Nobuyuki
Semiconductor Company Toshiba Corporation
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Itoh Nobuyuki
Semiconductor Company Toshiba Corp.
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