Improvement of Schottky MOSFET Characteristics by B^+ Implantation in Active Region
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1983-10-20
著者
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Wada T
Department Of Materials Chemistry Ryukoku University
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Wada Takao
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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Kato Kinya
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Kato Kinya
Ntt Interdisciplinary Research Laboratories
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Kato Kinya
Musashino Electrical Communication Laboratory
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Wada T
Central Research Laboratories Matsushita Electric Industrial Co. Ltd.
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Wada T
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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Uehira Kazutake
NTT Interdisciplinary Research Laboratories
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Uehira Kazutake
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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Wada Tsutomu
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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Wada Tsutomu
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Uehira K
Ntt Interdisciplinary Research Laboratories
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