Effect of Pre-Annealing in Preventing Gate Oxide Breakdown Voltage Degradation Induced by Polysilicon Gate Delineation Using Ion Milling
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概要
- 論文の詳細を見る
Polysilicon gate MUS capacitors were fabricated using Kaufmann-type ion milling apparatus in gate electrode delineation. The breakdown voltage of the MOS capacitors was degraded when the polysilicon sheet resistance at the start of ion milling was higher than 20 kΩ/□. The degradation was prevented when the polysilicon sheet resistance was lowered by annealing to less than 2 kΩ/□ before ion milling.
- 社団法人応用物理学会の論文
- 1983-08-20
著者
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Yachi T
Ntt Telecommunications Energy Laboratories
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Yachi Toshiaki
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Wada Tsutomu
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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YAMAUCHI Noriyoshi
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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Wada Tsutomu
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Yamauchi Noriyoshi
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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