Study on Parasitic Bipolar Effect in a 200-V-Class Power MOSFET Using Silicon Direct Bonding SOI Wafer (Special Issue on SOI Devices and Their Process Technologies)
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概要
- 論文の詳細を見る
The parasitic bipolar effect in a 200-V-class thin-film SOI power MOSFET fabricated using the silicon wafer direct bonding wafer was investigated by electrical measurement, two-dimensional process simulation, emission microscopy, and 2-dimensional thermal analysis. It degraded the breakdown voltage of the thin-film SOI power MOSFET and was caused by the increase in the sheet resistance of the body contact region. Photo emission analysis indicated that excess holes recombined in the n^+-source region.
- 社団法人電子情報通信学会の論文
- 1997-03-25
著者
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MATSUMOTO Satoshi
NTT Intefrated Information & Energy Systems Laboratories
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YACHI Toshiaki
NTT Integrated Information & Energy Systems Laboratories
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Yachi T
Ntt Telecommunications Energy Laboratories
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Yachi Toshiaki
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Matsumoto Satoshi
Ntt Integrated Information Amp Energy Systems Laboratories
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