Switching Converter Using Thin-Film Microtransformer with Monolithically Integrated Rectifier Diodes
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概要
- 論文の詳細を見る
Our compact switching converter using a thin-film microtransformer mono-lithically integrated with rectifier diodes represents the first step in developing a monolithic micro-switching converter that can be integrated with semiconductor devices and magnetic components. This converter is a single-ended forward converter with resonant reset and operates successfully at 15MHz. The maximum output power is 0.5W.
- 社団法人電子情報通信学会の論文
- 1997-06-25
著者
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YANAGISAWA Keiichi
NTT Integrated Information & Energy Systems Laboratories
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YACHI Toshiaki
NTT Integrated Information & Energy Systems Laboratories
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Yachi T
Faculty Of Engineering Tokyo University Of Science
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Yachi T
Ntt Telecommunications Energy Lab. Musashino‐shi Jpn
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Tago A
United Graduate School For Agiricultural Sci. Jpn
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Mino M
Ntt Multi-media System Laboratory Group
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MINO Masato
NTT Multi-media System Laboratory Group
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TAGO Akio
NTT Advanced Technology Co.
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SAKAKIBARA Kazuhiko
NTT Intellectual Property Department
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Yanagisawa Keiichi
Ntt Integrated Information Amp Energy Systems Laboratories
関連論文
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- Application of Reversed Silicon Wafer Direct Bonding to Thin-Film SOI Power Ics
- Failure Analysis and New Design of a Thin-Film Silicon-on-Insulator Power Metal-Oxide-Semiconductor Field-Effect Transistor Based on Emission Microscopy and 2-Dimensional Device Simulation
- Switching Characteristics of a Thin Film SOI Power MOSFET
- Integration of a Power Supply for System-on-Chip (Special Section on Analog Circuit Techniques for System-on-Chip Integration)
- A Novel Low-Power Dissipation and High-Speed Converter-Control-IC for the Transmitting Amplifier of Digital Portable Telephones
- Hot-Carrier Effect of an Ultra-Thin-Film SOI Power MOSFET
- Switching Converter Using Thin-Film Microtransformer with Monolithically Integrated Rectifier Diodes
- Study on Parasitic Bipolar Effect in a 200-V-Class Power MOSFET Using Silicon Direct Bonding SOI Wafer (Special Issue on SOI Devices and Their Process Technologies)
- Effect of Buried Oxide Thickness in a Thin-Film Silicon on Insulator Power Metal-Oxide-Semiconductor Field-Effect Transistor