Integration of a Power Supply for System-on-Chip (Special Section on Analog Circuit Techniques for System-on-Chip Integration)
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概要
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Integrating the power supply and signal processing circuit into one chip is an important step towards achieving a system-on-chip. This paper reviews and looks at the current technologies and their trends for power supply components such as DC-DC converters, intelligent power LSIs, and thin-film magnetic devices for the system-on-chip. A device structure has been proposed for the system-on-chip that is based on a quasi-SOI technique, in which the buried oxide layer is partially removed from the SOI substrate. In this structure, the CMOS devices for the digital signal-processing circuit and the bipolar transistors are formed in a conventional SOI region, and the CMOS analog devices and high-voltage devices are formed in a quasi-SOI region.
- 1997-02-25
著者
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MATSUMOTO Satoshi
NTT Intefrated Information & Energy Systems Laboratories
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YACHI Toshiaki
NTT Integrated Information & Energy Systems Laboratories
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Yachi Toshiaki
Ntt Integrated Information & Energy Systems Laboratories
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MINO Masato
NTT Integrated Information & Energy Systems Laboratories
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Mino Masato
Ntt Integrated Information & Energy Systems Laboratories
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Matsumoto Satoshi
Ntt Integrated Information & Energy Systems Laboratories
関連論文
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- Failure Analysis and New Design of a Thin-Film Silicon-on-Insulator Power Metal-Oxide-Semiconductor Field-Effect Transistor Based on Emission Microscopy and 2-Dimensional Device Simulation
- Switching Characteristics of a Thin Film SOI Power MOSFET
- Integration of a Power Supply for System-on-Chip (Special Section on Analog Circuit Techniques for System-on-Chip Integration)
- A Novel Low-Power Dissipation and High-Speed Converter-Control-IC for the Transmitting Amplifier of Digital Portable Telephones
- Hot-Carrier Effect of an Ultra-Thin-Film SOI Power MOSFET
- Switching Converter Using Thin-Film Microtransformer with Monolithically Integrated Rectifier Diodes
- Study on Parasitic Bipolar Effect in a 200-V-Class Power MOSFET Using Silicon Direct Bonding SOI Wafer (Special Issue on SOI Devices and Their Process Technologies)
- Device Simulation of a Thin-Film Silicon on Insulator Power Metal-Oxide-Semiconductor Field-Effect Transistor for Structure Optimization
- Effect of Buried Oxide Thickness in a Thin-Film Silicon on Insulator Power Metal-Oxide-Semiconductor Field-Effect Transistor