Effect of Buried Oxide Thickness in a Thin-Film Silicon on Insulator Power Metal-Oxide-Semiconductor Field-Effect Transistor
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概要
- 論文の詳細を見る
Effect of buried oxide thickness in a thin-film silicon on insulator (SOI) power metal-oxide-semiconductor field-effect (MOSFET) transistor is demonstrated. In the thin-film SOI power MOSFETs fabricated on a separation by implanted oxygen (SIMOX) substrate, devices with a thin buried oxide showed higher performance than ones with a thick buried oxide. The device with thinner top silicon layer operated in a fully depleted mode. The minimum specific on-resistance of the fabricated device was 66 m Ω· mm2 at a breakdown voltage of 32 V.
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 1997-06-15
著者
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MATSUMOTO Satoshi
NTT Intefrated Information & Energy Systems Laboratories
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YACHI Toshiaki
NTT Integrated Information & Energy Systems Laboratories
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Matsumoto Satoshi
NTT Integrated Information and Energy Systems Laboratories, 3-9-11 Midori-cho, Musashino, Tokyo 180, Japan
関連論文
- Application of Reversed Silicon Wafer Direct Bonding to Thin-Film SOI Power ICs
- Application of Reversed Silicon Wafer Direct Bonding to Thin-Film SOI Power Ics
- Failure Analysis and New Design of a Thin-Film Silicon-on-Insulator Power Metal-Oxide-Semiconductor Field-Effect Transistor Based on Emission Microscopy and 2-Dimensional Device Simulation
- Switching Characteristics of a Thin Film SOI Power MOSFET
- Integration of a Power Supply for System-on-Chip (Special Section on Analog Circuit Techniques for System-on-Chip Integration)
- A Novel Low-Power Dissipation and High-Speed Converter-Control-IC for the Transmitting Amplifier of Digital Portable Telephones
- Hot-Carrier Effect of an Ultra-Thin-Film SOI Power MOSFET
- Switching Converter Using Thin-Film Microtransformer with Monolithically Integrated Rectifier Diodes
- Study on Parasitic Bipolar Effect in a 200-V-Class Power MOSFET Using Silicon Direct Bonding SOI Wafer (Special Issue on SOI Devices and Their Process Technologies)
- Device Simulation of a Thin-Film Silicon on Insulator Power Metal-Oxide-Semiconductor Field-Effect Transistor for Structure Optimization
- Effect of Buried Oxide Thickness in a Thin-Film Silicon on Insulator Power Metal-Oxide-Semiconductor Field-Effect Transistor