Characteristics of Field-Induction-Drain (FID) Amorphous-Silicon Thin-Film Transistors
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概要
- 論文の詳細を見る
The field-induction-drain (FID) structure is adopted to amorphous silicon (a-Si) thin-film transistors (TFTs). An OFF current of 1.5×10^<-16> A/μm (V_<DRAIN>=10V, V_<GATE>=-20 V) and an ON/OFF current ratio of 10^9 are achieved by the FID a-Si TFT. Measurement of the OFF current characteristics proves that the OFF current of the FID TFT is dominated by generation-recombination current, not by field-emission current. The FID structure is very promising for reducing anomalous leakage current and obtaining high ON/OFF current ratio.
- 社団法人応用物理学会の論文
- 1995-02-15
著者
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Kato Kinya
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Kato Kinya
Ntt Interdisciplinary Research Laboratories
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TANAKA Keiji
NTT Integrated Information & Energy Systems Laboratories
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Kato Kinya
Ntt Integrated Information Amp Energy Systems Laboratories
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Tanaka Keiji
Ntt Interdisciplinary Research Laboratories
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