Uniaxial Stress Effect on the (000) Valley of As-Doped Ge

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The stress dependence of the (000) conduction band minimum (Γ_<2^->) of germanium was investigated at 77°K by the shifts of onset-voltages of the direct tunneling currents in reverse-biased Ge tunnel junctions under large uniform uniaxial stresses. The tunnel junctions were formed by alloying tin dots doped with 0.5% gallium on opposite faces of a germanium rectangular bar, containing the arsenic of about 2×10^<19>cm^<-3> concentration. Maximum stress applied along the [111] axis was about 6×10^9dyn/cm^2. The uniaxial stress coefficient of the (000) conduction valley was found to be (10/3)×10^<-12>eV cm^2/dyn, in good agreement with that of Paul et al., determined by optical measurements on intrinsic germanium under hydrostatic pressure. The stress dependence of the (000) minimum conduction band of germanium may be independent of the impurity concentration.
社団法人応用物理学会の論文
1967-05-05