Damping Mechanism of Acoustoelectric Oscillation and the Effect of Hole-Injection in n-InSb
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概要
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The damping mechanism of acoustoelectric oscillation in n-InSb has been studied by a double-pulse method in a transverse magnetic field larger than 3 kG. The damping of current oscillation essentially occurs under a constant-voltage condition and the steady-state current is dependent on the applied-voltage. Computer calculations using a current-dependent acoustic gain-factor explain well these results. However, the hole-injection occurs when the acoustic domain arrives at the anode, if the ohmic contact is poor (made with In) and the applied-voltage is larger than about 10 V/cm. In p^+ -contact, it is clearly shown how the domain is destroyed by the hole-injection emitting the microwave noise (about 30 M〜50 MHz), and why the period is 2〜3 times as long as the one-way transit time quite unlike the damped oscillation in n^+ -contact.
- 社団法人応用物理学会の論文
- 1975-03-05
著者
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Tsubouchi Kazuo
Department Of Electronics Faculty Of Engineering Nagoya University
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Arizumi Tetsuya
Department Of Electronic Engineering Faculty Of Engineering Nagoya University
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Arizumi Tetsuya
Department Of Electronics Faculty Of Engineering Nagoeya University
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Tsubouchi Kazuo
Department Of Electronics Faculty Of Engineering Nagoya University:research Institute Of Electrical
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