Barrier Capacitance and Built-in Voltage of Tunnel Diodes
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概要
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Taking the mobile carriers in the depletion layer into account, the barrier capacitance of a tunnel diode is shown to be expressed by the following equation, 1/(C^2)=(2(N_A+N_D))/(qεε_0N_AN_D)[V_B+V_a-(kT)/q{(F_<3/2>(ζ_p))/(F_<1/2>(ζ_p))+(F_<3/2>(ζ_n))/(F_<1/2(ζ_n))}], where Fν(ζ) is the Fermi integral. The slope of the 1/C^2vs.V_a (applied voltage) curve is in accord with the classical formula (obtained through the ordinary Schottky approximation), but the voltage intercept V_c (by extrapolating to l/C^2=0) is different from the built-in voltage V_B. The temperature dependence of the built-in voltage of a tunnel diode is satisfactorily explained.
- 社団法人応用物理学会の論文
- 1968-07-05
著者
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Arizumi Tetsuya
Department Of Electronic Engineering Faculty Of Engineering Nagoya University
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Yoshida Akira
Department Of Cardiology Mitsubishi Kyoto Hospital
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Yoshida Akira
Department Of Agricultural Chemistry Nagoya University
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