Properties of III-V Based Ferromagnetic Semiconductor (Ga_<1-x>Mn_x) As : As Pressure Dependence
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概要
- 論文の詳細を見る
Growth condition dependence of electronic, magnetic and optical characteristics of magnetic semiconductor (GaMn)As is studied. With decreasing the As_4 overpressure during the growth of (GaMn)As, the conduction behavior became more metallic, the ferromagnetic transition temperature became higher, and the magneto-optical response got strong. Besides, photoluminescence was obtained from the (GaMn)As samples grown under low As_4 overpressure.
- 社団法人日本磁気学会の論文
- 1999-01-20
著者
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TANAKA M.
Department of Cardiology Tohoku Welfare-Pension Hospital
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Nishinaga T
Department Of Materials Science And Engineering Faculty Of Science And Technology Meijo University
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Shimizu H.
Department of Electronic Engineering, The University of Tokyo
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Hayashi T.
Department of Electronic Engineering, The University of Tokyo
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Nishinaga T.
Department of Electronic Engineering, The University of Tokyo
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Nishinaga T
Meijo Univ. Nagoya Jpn
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Nishinaga T.
Department Of Electronic Engineering Graduate School Of Engineering University Of Tokyo
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Shimizu H.
Department of Animal Husbandry, Faculty of Agriculture, Tohoku University
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