Electrical and Optical Properties of Amorphous Germanium
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概要
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The temperature dependence of conductivity, optical absorption, photoconductivity spectra and the influence of annealing on these properties have been measured on amorphous Ge films of 0.49 to 3 μm thickness. The resistivity of films is 80〜130Ω・cm and the sharp absorption edge occurs at 〜0.6 eV. The photoconductivity spectra have two peaks at photon energies of 0.8 and 1.0 eV. One peak at 1.0 eV is in excellent agreement with the mobility gap determined from high temperature conductivities. From the annealing experiments, the other peak at 0.8 eV has been ascribed to the peak density of the localized states near the valence band. An energy band model of amorphous Ge has been proposed for consistent explanations of experimental data.
- 社団法人応用物理学会の論文
- 1974-01-05
著者
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SUZUKI TOHRU
Department of Chemical Engineering, Faculty of Engineering, Nagoya University
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Osaka Yukio
Department Of Electrical Engineering Faculty Of Engineering Hiroshima University
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Hirose Masataka
Department Of Electrical Engineering Hiroshima University
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Hirose Masataka
Department Of Electrical Engineering Graduate School Of Advanced Sciences Of Matter Hiroshima Univer
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Suzuki Tohru
Department Of Electronics Hiroshima Institute Of Technology
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YOSHIFUJI Susumu
Department of Electrical Engineering, Faculty of Engineering Hiroshima Universsity
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Yoshifuji Susumu
Department Of Electrical Engineering Faculty Of Engineering Hiroshima Universsity
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Hirose Masataka
Department Of Electrical Engineering Faculty Of Engineering Hiroshima University
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