Formation of Metal-Insulator-Semiconductor Structure(B/Hexagonal BN/Graphite) by Plasma Chemical Vapor Deposition
スポンサーリンク
概要
- 論文の詳細を見る
A new technique for fabrication of a metal-insulator-semi-conductor (MIS) structure (B /hexagonal BN / graphite)on graphite is presented. Hexagonal BN(h-BN) and B films were deposited by plasma chemical vapor deposition (CVD). The B films were n-type semiconductors. Raman measturement of the B film showed that the B-configuration of these films is similar to the one in tetragonal B crystal, The capacitance-voltage (C-V) charac-teristics of the MIS structure at 1OO kHz with a 47 um thick h-BN layer showed inversion behavior. This behavior seems to be due to the small energy gap (0.6 eV) of B films.
- 社団法人応用物理学会の論文
- 1997-03-15
著者
-
Kohno Kenji
Department Of Electrical Engineering Hiroshima-denki Institute Of Technology
-
Osaka Yukio
Department Of Electrical Engineering Hiroshima-denki Institute Of Technology
-
Osaka Yukio
Department Of Electrical Engineering Faculty Of Engineering Hiroshima University
-
NAKAGAWA Nahotoshi
Department of Electrical Engineering, Faculty of Engineering, Hiroshima University
-
Nakagawa Nahotoshi
Department Of Electrical Engineering Faculty Of Engineering Hiroshima University
-
KOHNO Kenji
Department of Electrical Engineering, Hiroshima-Denki Institute of Technology
関連論文
- YBa_2Cu_3O_ Angle Grain Boundary Junction on Si Bicrystal Substrate
- Substitutional Doping of a-Si_xN_ : H : III-1: AMORPHOUS FILMS
- Wide Optical-Gap, Photoconductive a-Si_xN_: H
- Nucleation of Microcrystallites in Phosphorus-Doped Si: H Films
- A New Technique of Boron Doping in Si:H Films
- Effect of Hydrogen Dilution on Structure of a-Si:H Prepared by Substrate Impedance Tuning Technique : Condensed matter
- Microcrystallization in P-Doped Si:H Films at High Deposition Rate
- Photoinduced Absorption on Phosphorus and Nitrogen Doped a-Si:H Films Prepared at High Deposition-Rate
- Proton Nuclear Magnetic Resonance Studies on Structural Changes Induced by Annealing of Hydrogenated Amorphous Silicon Films Prepared at High Deposition-Rate
- Effect of Annealing on Photoinduced Absorption in Amorphous Silicon Films Prepared at High Deposition Rates
- Annealing Effect on Hydrogenated Amorphous Silicon Films Prepared at High Deposition-Rate by Substrate Impedance Tuning Technique
- Effect of Annealing on Hydrogenated Amorphous Silicon Prepared at High Deposition Rate
- Amorphous Silicon Static Induction Transistor
- Exciton Structure in Alkali-Halide Crystals
- Epitaxial Growth of Ba_2YCu_3O_x Thin Film on Epitaxial ZrO_2/Si(100) : Electrical Properties of Condensed Matter
- Physical Properties of SiO_2-doped Si Films and Electroluminescence in Metal/SiO_2-doped Si/p-Si Diodes
- 3P18:Effects of swimming training on the liver cell cycle in rats
- 1P17:Changes in mean of corpuscular volume (MCV) of red blood cells (RBC) during exercise
- 2E6:Changes in plasma lipids induced by inhalation of high oxygen concentration
- Preparation of B-Si-Ge Alloys by Sputter-Assisted-Plasma CVD
- Changes of Structural, Electrical, and Optical Properties of Microcrystalline Si_xGe_ Films by Annealing
- Electronic Properties of Post-Hydrogenated Lightly-Boron-Doped CVD Amorphous Silicon
- Growth of Microcrystalline Si_xGe_ Alloy Films by Sputter-Assisted-Plasma CVD
- Nonlinear I-V Characteristics of Bi_2Sr_2CaCu_2O_x Thin Films
- Preparation and Properties of Ultrathin High-T_c Superconducting Films on Si
- Fabrication of All-High-T_c Josephson Junction Using As-Grown YBa_2Cu_3O_x Thin Films
- Crystalline Qualities and Critical Current Densities of As-Grown Ba_2YCu_3O_x Thin Films on Silicon with Buffer Layers
- Josephson Effect in Wide Superconducting Bridges Made by Epitaxial Ba_2YCu_3O_x Thin Films on YSZ/Si(100)
- Two-Phase Structure of a-Si_N_x:H Fabricated by Microwave Glow-Discharge Technique
- Quantum Size Effect and HRTEM Observation of CdSe Microcrystallites Doped into SiO_2-Glass Films Prepared by Rf-Sputtering
- A New Method of Measuring Internal Stress in Thin Films Deposited on Silicon by Raman Spectroscopy
- Raman Scattering Study of Tehrmal SiO_2 Layers Grown on Silicon
- Epitaxial Growth of CdTe by H_2 Sputtering : Semiconductors and Semiconductor Devices
- Deposition of Hydrogenated Microcrystalline Films of CdTe by Chemical Sputtering in Hydrogen : Surfaces, Interfaces and Films
- Epitaxial Growth of CdTe on InSb(100) by RF Sputtering
- Properties of Amorphous Silicon Nitride Prepared at High Deposition Rate
- Reflectance spectra of BN Materials in the Vacuum Ultraviolet
- Photoluminescence of Si Microcrystals Embedded in Si0_2 Glass Films
- Photoluminescence from Si Network in SiO_2-Doped Si Films
- Appearance of Quasi-Direct Optical Transition from Si Network in SiO_2-Doped Si Films
- Dependence of Electronic Properties of Hydrogenated Amorphous Ge on Deposition Condition
- Visible Photoluminescence from Si Microcrystals Embedded in SiO_2 Glass Films
- Defect Compensation by Bonded Hydrogen in Undoped a-Ge:H Films with Mono- and Dihydride Bonding
- Preparation and Properties of Si Microcrystals Embedded in SiO_2 Glass Films
- Preparation and Properties of Ge Microcrystals Embedded in SiO_2 Glass Films
- Structural Changes of Amorphous GeTe_2 Films by Annealing (Formation of Metastable Crystalline GeTe_2 Films)
- Interface States Induced by Amorphous SiO_2 in MOS Structures
- Defect States and Electronic Properties of Post-Hydrogenated CVD Amorphous Silicon
- Preparation of the High-T_c Superconducting Phase in Bi, Pb-Sr-Ca-Cu-O films by Pyrolysis of 2-Ethylhexanoates : Electrical Properties of Condensed Matter
- Formation of High-T_c Superconducting BiSrCaCu_2O_x Films on ZrO_2/Si(100) : Electrical Properties of Condensed Matter
- preparation of BiSrCaCu_2O_x Films with T_c>77 K by Pyrolysis of Organic Acid Salts : Electrical Properties of Condensed Matter
- DSC Studies of Glassy Behavior in P-Doped a-Si:H : Condensed Matter
- Optical and Mechanical Properties of Hard Hydrogenated Amorphous Carbon Films Deposited by Plasma CVD
- Formation of Cubic Boron Nitride Film on Si with Boron Buffer Layers
- Formation and Properties of Cubic Boron Nitride Films on Tungsten Carbide by Plasma Chemical Vapor Deposition
- CuCl Microcrystallite-Doped SiO_2 Glass Thin Films Prepared by RF Sputtering
- Preparation and Properties of In_xGa_As Microcrystallites Embedded in SiO_2 Glass Films
- Evaluation of Epitaxial ZnTe Films Prepared by RF Sputtering by Means of Ion Beam Channeling
- Semiconducting CdTe Microcrystalline-Doped SiO_2 Glass Thin Films Prepared by Rf-Sputtering
- Heteroepitaxial Growth of ZnS_xTe_ on GaAs(100) by RF Sputtering
- Preparation and Crystallization Process of the High-T_c Superconducting Phase (T_c(end)>100 K) in Bi, Pb-Sr-Ca-Cu-O Glass-Ceramics
- Synthesis of Metastable Ge_xSn_ Alloys by Chemical Sputtering in H_2
- Heteroepitaxial Growth of Yttria-Stabilized Zirconia (YSZ) on Silicon : Surfaces, Interfaces and Films
- Characterization of the Structure in Hydrogenated Amorphous Silicon by Means of ^Sn Mossbauer Spectroscopy
- Function of Substrate Bias Potential for Formation of Cubic Boron Nitride Films in Plasma CVD Technique
- Effects of Film Thickness and Substrate-Film Interface on the Formation of Metastable Crystalline GeTe_2 from Amorphous GeTe_2 Film
- Formation of Metal-Insulator-Semiconductor Structure(B/Hexagonal BN/Graphite) by Plasma Chemical Vapor Deposition
- Effects of a Negative Self-Bias on the Growth of Cubic Boron Nitride Prepared by Plasma Chemical Vapor Deposition
- Preparation and Crystallization Process of High-T_c Superconducting Bi, Pb-Sr-Ca-Cu-O Film (T_c=101 K) by Melt-Quenching and Annealing Techniques
- Formation of Cubic Boron Nitride Films on Diamond by Plasma CVD Technique
- Structural Changes of Amorphous Ge_Sn_x Alloy Films by Annealing
- Binding Energy of a Screened Hydrogenic Impurity in a Quasi One-Dimensional Electron Gas
- Binding Energies of Wannier Excitons in Ga_Al_xAs Quantum-Well Wires
- Formation of Polycrystalline SiC in ECR Plasma
- Internal Photoemission in a-Si:H Schottky-Barrier and MOS Structures : III-2: AMORPHOUS SOLAR CELLS : Characterization
- Current Transport Mechanism of Hydrogenated Amorphous Silicon Schottky Barrier Diodes
- Theoretical Interpretation of Capacitance-Voltage Characteristics of Metal-a-Si:H Schottky Barriers
- Exact Determination of Bulk Gap-State Density in a-Si : H : III-1: AMORPHOUS FILMS
- Influence of Gap States on Basic Characteristics of a-Si:H Thin Film Transistors
- Theoretical Interpretations of the Gap State Density Determined from the Field Effect and Capacitance-Voltage Characteristics of Amorphous Semiconductors
- Hydrogen Implantation into CVD Amorphous Silicon : II-1: AMORPHOUS FILM PREPARATION AND CHARACTERIZATION (I)
- Electrical and Optical Properties of Amorphous Germanium
- Structural and Electronic Characterization of Discharge-Produced Boron Nitride
- Localized-State-Density Distribution in Post-Hydrogenated CVD Amorphous Silicon
- Schottky Barrier Solar Cells of Weakly Hydrogenated CVD Amorphous Silicon : III-3: AMORPHOUS SOLAR CELLS : Device Physics
- Gap States and ESR of Boron-Doped CVD Amorphous Silicon
- Electronic Density of States in Chemically Vapor-Deposited Amorphous Silicon
- Localized States in Amorphous and Polycrystallized Si
- Surface States in Tunnelable MOS Structures
- Current Transport in Doped Polycrystalline Silicon
- Note on Localized States in Amorphous Germanium
- Silicon Thin-Film Formation by Direct Photochemical Decomposition of Disilane
- Binding Energies of Wannier Excitons in Ga_Al_xAs Quantum-Well Wires
- Optical Emission Spectroscopy of the SiH_4-NH_3-H_2 Plasma during the Growth of Silicon Nitride
- Electron Spin Resonance in Discharge-Produced Silicon Nitride
- Discrete Shifts of Absorption and Emission Lines by Individual Electron-Hole Pair Excitation in DC-Biased Quantum Box Structures
- Infrared Polarized Reflection Spectra of SrTiO_3 Thin Films on Metal/Si
- Physical Properties of Heavily B-doped Microcrystalline Si-Ge Alloys and Schottky Barrier of B-Si-Ge/P-Si
- Soft X-Ray Emission Spectra of B $K$ and Si $L_{2,3}$ in B–Si–Ge Alloys
- Soft X-Ray Emission Spectra of B $K$ and Si $L_{2,3}$ in B–Si–Ge Alloys