Electron Spin Resonance in Discharge-Produced Silicon Nitride
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概要
- 論文の詳細を見る
ESR signal from the defects in plasma-deposited silicon nitride has been observed, for the first time. The g-value (2.0055) is identical with that of silicon dangling bonds in amorphous Si: H, and the linewidth (14.5 G) is two times as large as that of amorphous Si: H for spin densities below 10^<18> cm^<-3>, above which narrowing of the linewidth takes place as in the case of amorphous Si: H. It is suggested that most of dangling bonds of nitrogen atoms in the silicon nitride are passivated by bonded-hydrogen and silicon dangling bonds are mainly responsible for the ESR signal. A correlation between the spin density and leakage current through the film is also discussed.
- 社団法人応用物理学会の論文
- 1981-01-05
著者
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Osaka Yukio
Department Of Electrical Engineering Faculty Of Engineering Hiroshima University
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Hirose Masataka
Department Of Electrical Engineering Graduate School Of Advanced Sciences Of Matter Hiroshima Univer
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Yokoyama Shin
Department Of Electrical Engineering Hiroshima University
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Yokoyama Shin
Department Of Electrical Engineering Faculty Of Engineering Hiroshima University
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Hirose Masataka
Department Of Electrical Engineering Faculty Of Engineering Hiroshima University
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