Silicon Thin-Film Formation by Direct Photochemical Decomposition of Disilane
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概要
- 論文の詳細を見る
Silicon thin-films have been deposited by the direct photolysis of disilane at a substrate temperature below 300℃. The growth rate depends on irradiation intensity of a low pressure mercury-lamp, and a typical rate of 15 Å/min has been obtained under 〜0.08 watts/cm^2 illumination, regardless of substrate temperature. The deposited films are composed of an amorphous network containing bonded-hydrogen in the range 6-9 at.%. The bonding configurations of SiH groups varied from silicon dihydride to monohydride with increasing substrate temperature, and correspondingly the dark conductivity decreased from 10^<-7> to 10^<-11> Ω^<-1>cm^<-1>. A broad photoluminescence peak at 1.4 eV was observed for a specimen grown at 200℃.
- 社団法人応用物理学会の論文
- 1983-01-20
著者
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MISHIMA Yasuyoshi
Department of Electrical Engineering, Hiroshima University
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Osaka Yukio
Department Of Electrical Engineering Hiroshima University
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Osaka Yukio
Department Of Electrical Engineering Faculty Of Engineering Hiroshima University
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MISHIMA Yasuyoshi
Fujitsu Laboratories Ltd.
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Nagamine Kunihiro
Department Of Electrical Engineering Hiroshima University
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Hirose Masataka
Department Of Electrical Engineering Graduate School Of Advanced Sciences Of Matter Hiroshima Univer
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Mishima Yasuyoshi
Department Of Electrical Engineering Hiroshima University
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Kitagawa Nobuhisa
Corporate Development Department Mitsui Toatsu Chemicals Inc.
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ASHIDA Yoshinori
Corporate Development Department, Mitsui Toatsu Chemicals Inc.
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ISOGAYA Kazuyoshi
Corporate Development Department, Mitsui Toatsu Chemicals Inc.
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Ashida Yoshinori
Corporate Development Department Mitsui Toatsu Chemicals Inc.
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Isogaya Kazuyoshi
Corporate Development Department Mitsui Toatsu Chemicals Inc.
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Hirose Masataka
Department Of Electrical Engineering Faculty Of Engineering Hiroshima University
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