Theory of Relaxation of Frozen Defects in Doped Hydrogenated Amorphous Silicon
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The equilibration rate of frozen defects in phosphorus-doped hydrogenated amorphous silicon is described by the stretched-exponential time dependence exp(-(t/τ)^β), where 0<β<1. Kakalios and Jackson have explained this phenomenon based on the assumptions that the neck hydrogen diffusion process to eliminate frozen defects is the diffusion between the interstitial sites, and the diffusion constant is dispersive in time, due to the distribution of hydrogen trapping sites on weak Si-Si bonds. In this paper, these assumptions are criticized and an alternative explanation is proposed based on the assumption that the neck hydrogen diffusion process is the jump process of hydrogen from the Si-H bond site into the interstitial site.
- 社団法人応用物理学会の論文
- 1991-11-15
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