Theoretical Interpretation of Capacitance-Voltage Characteristics of Metal-a-Si:H Schottky Barriers
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概要
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The capacitance-voltage characteristics of hydrogenated amorphous silicon Schottky barriers were calculated for typical cases of the gap-state density distributions in this material. It is demonstrated that the slope of a C^<-2> vs V plot provides the ionized state density associated with the gap-state distribution near the midgap and that the built-in potential in the barrier can be determined from the characteristic energy of gap states and the intercept voltage defined by extrapolating the straight line of the C^<-2> vs V plot at large reverse bias voltages.
- 社団法人応用物理学会の論文
- 1983-05-20
著者
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SUZUKI TOHRU
Department of Chemical Engineering, Faculty of Engineering, Nagoya University
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Osaka Yukio
Department Of Electrical Engineering Faculty Of Engineering Hiroshima University
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Hirose Masataka
Department Of Electrical Engineering Hiroshima University
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Hirose Masataka
Department Of Electrical Engineering Graduate School Of Advanced Sciences Of Matter Hiroshima Univer
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Suzuki Tohru
Department Of Electronics Hiroshima Institute Of Technology
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Hirose Masataka
Department Of Electrical Engineering Faculty Of Engineering Hiroshima University
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