Influence of Gap States on Basic Characteristics of a-Si:H Thin Film Transistors
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概要
- 論文の詳細を見る
The static characteristics of hydrogenated amorphous silicon thin-film transistors are theoretically studied based on the analysis of field effect in a-Si:H MOS structures. The TFT characteristics are obtained for typical cases of the gap state density distributions and the results showed that the slope of the state density distribution near and above the Fermi-level is a key factor to determine the on/off current ratio of a-Si:H TFTs.
- 社団法人応用物理学会の論文
- 1982-05-20
著者
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SUZUKI TOHRU
Department of Chemical Engineering, Faculty of Engineering, Nagoya University
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Osaka Yukio
Department Of Electrical Engineering Faculty Of Engineering Hiroshima University
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Hirose Masataka
Department Of Electrical Engineering Hiroshima University
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Hirose Masataka
Department Of Electrical Engineering Graduate School Of Advanced Sciences Of Matter Hiroshima Univer
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Suzuki Tohru
Department Of Electronics Hiroshima Institute Of Technology
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Hirose Masataka
Department Of Electrical Engineering Faculty Of Engineering Hiroshima University
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