Growth of Microcrystalline Si_xGe_<1-x> Alloy Films by Sputter-Assisted-Plasma CVD

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1984-09-20

著者

• OSAKA Yukio

  Department of Electrical Engineering, Hiroshima University

• Kohno Kenji

  Department Of Electrical Engineering Hiroshima-denki Institute Of Technology

• IMURA Takeshi

  Department of Electrical Engineering, Osaka University

• NAKASHITA Toshio

  Department of Electrical Engineering, Hiroshima University

• IWAOKA Teiji

  Department of Electrical Engineering, Hiroshima University

• Iwaoka T

  Department Of Electrical Engineering Hiroshima University:(present Address) Disco Abrasive Systems L

• Iwaoka Teiji

  Department Of Electrical Engineering Hiroshima University

• Osaka Y

  Department Of Electrical Engineering Hiroshima-denki Institute Of Technology

• Osaka Yukio

  Department Of Electrical Engineering Faculty Of Engineering Hiroshima University

• Imura T

  Mitsubishi Paper Mills Ltd.

• Imura T

  Department Of Electrical Engineering Hiroshima University

• Imura Takeshi

  Department Of Electrical Engineering Faculty Of Engineering Osaka University

• Kohno K

  Hiroshima Kokusaigakuin Univ. Hiroshima Jpn

• Nakashita Toshio

  Department Of Electrical Engineering Hiroshima University:(present Address) Department Of Applied Ph

• Nakashita Toshio

  Department Of Applied Physics

• Nakashita Toshio

  Department Of Electrical Engineering Hiroshima University:(present Address) Department Of Applied Physics Tokai University

• Imura Takeshi

  Department of Chemistry, Faculty of Engineering Science, Osaka University

関連論文

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• A New Technique of Boron Doping in Si:H Films
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• Effect of Hydrogen Dilution on Structure of a-Si:H Prepared by Substrate Impedance Tuning Technique : Condensed matter
• Microcrystallization in P-Doped Si:H Films at High Deposition Rate
• Photoinduced Absorption on Phosphorus and Nitrogen Doped a-Si:H Films Prepared at High Deposition-Rate
• Proton Nuclear Magnetic Resonance Studies on Structural Changes Induced by Annealing of Hydrogenated Amorphous Silicon Films Prepared at High Deposition-Rate
• Effect of Annealing on Photoinduced Absorption in Amorphous Silicon Films Prepared at High Deposition Rates
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