Preparation of B-Si-Ge Alloys by Sputter-Assisted-Plasma CVD
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1987-02-20
著者
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OSAKA Yukio
Department of Electrical Engineering, Hiroshima University
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Kohno Kenji
Department Of Electrical Engineering Hiroshima-denki Institute Of Technology
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IMURA Takeshi
Department of Electrical Engineering, Osaka University
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Osaka Y
Department Of Electrical Engineering Hiroshima-denki Institute Of Technology
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Osaka Y
Hiroshima Kokusaigakuin Univ. Hiroshima Jpn
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Osaka Yukio
Department Of Electrical Engineering Faculty Of Engineering Hiroshima University
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Imura T
Mitsubishi Paper Mills Ltd.
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Imura T
Department Of Electrical Engineering Hiroshima University
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Imura Takeshi
Department Of Electrical Engineering Faculty Of Engineering Osaka University
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Kohno K
Hiroshima Kokusaigakuin Univ. Hiroshima Jpn
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- Effect of Hydrogen Dilution on Structure of a-Si:H Prepared by Substrate Impedance Tuning Technique : Condensed matter
- Microcrystallization in P-Doped Si:H Films at High Deposition Rate
- Photoinduced Absorption on Phosphorus and Nitrogen Doped a-Si:H Films Prepared at High Deposition-Rate
- Proton Nuclear Magnetic Resonance Studies on Structural Changes Induced by Annealing of Hydrogenated Amorphous Silicon Films Prepared at High Deposition-Rate
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