Hydrogenated Amorphous Silicon Produced by Pyrolysis of Disilane in a Hot Wall Reactor
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概要
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Deposition kinetics and physical properties of hydrogenated amorphous silicon produced by low-pressure chemical vapor deposition of disilane have been investigated as a function of substrate temperature using a hot wall type reactor. The high growth rate of more than 8 A/sec has been achieved at a substrate temperature of 450℃ and the hydrogen content is about 9 at.%. The optical bandgap never exceeds 1.6 eV even for a hydrogen content of 18 at.% and the spin density is as low as 〜10^<16> cm^<-3>.
- 社団法人応用物理学会の論文
- 1984-03-20
著者
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MISHIMA Yasuyoshi
Department of Electrical Engineering, Hiroshima University
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Osaka Yukio
Department Of Electrical Engineering Faculty Of Engineering Hiroshima University
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Mishima Yasuyoshi
Department Of Electrical Engineering Hiroshima University
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Kojima Kenichi
Faculty Of Integrated Arts & Sciences And Faculty Of Science Hiroshima University
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Ashida Yoshinori
Corporate Development Department Mitsui Toatsu Chemicals Inc.
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Hirose Masataka
Department Of Electrical Engineering Faculty Of Engineering Hiroshima University
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KOJIMA Kenichi
Faculty of Integrated Arts and Sciences, Hiroshima, University
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