Properties of a-Si:H Film Deposited by Amplitude-Modulated RF Plasma Chemical Vapour Deposition for Thin Film Transistor
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概要
- 論文の詳細を見る
The method of amplitude-modulated RF plasma enhanced chemical vapour deposition (p-CVD) has been used to deposit the a-Si:H film. Various properties of the deposited a-Si:H film such as uniformity of thickness, stress of film and hydrogen concentration in the film are studied. These film properties are improved in the case of amplitude-modulated RF p-CVD compared with the CW case, particularly at the high deposition rate. Further investigation has been carried out by constructing a bottom gate thin film transistor (TFT) device without an etch stop layer. The measured electron mobility and threshold voltage, are also improved up to the deposition rate of 32 nm/min by the method of amplitude modulated RF p-CVD at the modulation frequency of 68 kHz.
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 1997-01-15
著者
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林 卓
Department Of Materials Science Shonan Institute Of Technology
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Hayashi Takafumi
Department Of Applied Physics Faculty Of Engineering The University Of Tokyo
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Hayashi Takayoshi
Advanced Research Institute For Science And Engineering Waseda University
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Kirimura Hiroya
R D Division Nissin Electric Co. Ltd.
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Kobayashi Masanao
R D Division Nissin Electric Co. Ltd.
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Nakahigashi Takahiro
R & D Division, Nissin Electric Co., Ltd., 47 Umezu-Takase-cho, Ukyo-ku, Kyoto 615, Japan
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Hayashi Tsukasa
R & D Division, Nissin Electric Co., Ltd., 47 Umezu-Takase-cho, Ukyo-ku, Kyoto 615, Japan
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Izumi Yoshihiro
R & D Division, Nissin Electric Co., Ltd., 47 Umezu-Takase-cho, Ukyo-ku, Kyoto 615, Japan
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Kobayashi Masanao
R & D Division, Nissin Electric Co., Ltd., 47 Umezu-Takase-cho, Ukyo-ku, Kyoto 615, Japan
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Kuwahara Hajime
R & D Division, Nissin Electric Co., Ltd., 47 Umezu-Takase-cho, Ukyo-ku, Kyoto 615, Japan
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Nakabayashi Masahiro
R & D Division, Nissin Electric Co., Ltd., 47 Umezu-Takase-cho, Ukyo-ku, Kyoto 615, Japan
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